MT46V64M4P-75:G TR Micron Technology Inc, MT46V64M4P-75:G TR Datasheet - Page 18
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MT46V64M4P-75:G TR
Manufacturer Part Number
MT46V64M4P-75:G TR
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V64M4P-75G_TR.pdf
(93 pages)
Specifications of MT46V64M4P-75:G TR
Organization
64Mx4
Density
256Mb
Address Bus
15b
Access Time (max)
750ps
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
150mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
Table 7:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
256Mb_DDR_x4x8x16_D2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Parameter/Condition
Operating one-bank precharge current:
t
clock cycle; Address and control inputs changing once every
two clock cycles
Operating one-bank active-read-precharge current:
Burst = 4;
Address and control inputs changing once per clock cycle
Precharge power-down standby current: All banks idle;
Power-down mode;
Idle standby current: CS# = HIGH; All banks are idle;
t
inputs changing once per clock cycle; V
and DM
Active power-down standby current: One bank active;
Power-down mode;
Active standby current: CS# = HIGH; CKE = HIGH; One bank
active;
inputs changing twice per clock cycle; Address and other
control inputs changing once per clock cycle
Operating burst read current: Burst = 2;
burst reads; One bank active; Address and control inputs
changing once per clock cycle;
Operating burst write current: Burst = 2; Continuous burst
writes; One bank active; Address and control inputs changing
once per clock cycle;
inputs changing twice per clock cycle
Auto refresh burst current:
Self refresh current: CKE ≤ 0.2V
Operating bank interleave read current: Four-bank
interleaving READs (burst = 4) with auto precharge;
t
control inputs change only during ACTIVE, READ, or WRITE
commands
CK =
CK =
RC = minimum
t
t
CK (MIN); DQ, DM, and DQS inputs changing once per
CK (MIN); CKE = HIGH; Address and other control
t
RC =
t
RC =
t
RAS (MAX);
I
V
0°C ≤ T
DD
DD
t
t
RC (MIN);
RC allowed;
Q = +2.6V ±0.1V, V
Specifications and Conditions (x16: -5B, -6, -6T, -75E, -75Z, -75) - Die Revision G Only
t
t
A
CK =
CK =
t
CK =
≤ +70°C; Notes: 1–5, 11, 13, 15, 47; Notes appear on pages 35–40; See also Table 9 on page 18
t
t
t
CK =
t
CK (MIN); CKE = LOW
CK (MIN); CKE = LOW
t
CK =
CK (MIN); DQ, DM, and DQS
t
CK =
t
CK =
t
CK (MIN); DQ, DM, and DQS
t
CK (MIN); I
t
CK (MIN); Address and
DD
t
CK (MIN);
IN
= +2.6V ±0.1V (-5B); V
t
t
Low power (L)
Standard
= V
REFC =
REFC = 7.8µs
t
OUT
RC =
REF
Continuous
I
= 0mA;
for DQ, DQS,
OUT
t
RFC (MIN)
t
RC (MIN);
= 0mA
18
DD
Symbol
Q = +2.5V ±0.2V, V
I
I
I
I
I
I
I
I
DD
DD
DD
DD
I
I
DD
DD
I
I
I
DD
DD
DD
DD
DD
DD
DD
4W
3N
5A
6A
2P
3P
4R
2F
0
1
5
6
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-5B
135
185
260
215
260
510
60
40
70
4
6
4
2
256Mb: x4, x8, x16 DDR SDRAM
-6/6T -75E -75Z
125
180
220
195
255
440
50
30
60
4
6
4
2
DD
Electrical Specifications – I
= +2.5V ±0.2V (-6, -6T, -75E, -7Z, -75);
125
170
185
160
235
380
45
50
25
4
6
4
2
120
155
185
160
235
380
45
25
50
©2003 Micron Technology, Inc. All rights reserved.
4
6
4
2
120
155
185
160
245
400
-75
45
30
50
4
6
4
2
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
23, 48
23, 48
24, 33
24, 33
23, 48
28, 50
23, 49
51
23
23
50
12
12
DD