MT46V64M4P-75:G TR Micron Technology Inc, MT46V64M4P-75:G TR Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT46V64M4P-75:G TR
Manufacturer Part Number
MT46V64M4P-75:G TR
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V64M4P-75G_TR.pdf
(93 pages)
Specifications of MT46V64M4P-75:G TR
Organization
64Mx4
Density
256Mb
Address Bus
15b
Access Time (max)
750ps
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
150mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
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State Diagram
Figure 2:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core1.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Simplified State Diagram
Note:
applied
Power
This diagram represents operations within a single bank only and does not capture concur-
rent operations in other banks.
ACT = ACTIVE
BST = BURST TERMINATE
CKEH = Exit power-down
CKEL = Enter power-down
EMR = Extended mode register
LMR = LOAD MODE REGISTER
MR = Mode register
WRITE
Precharge
all banks
Power
PRE
EMR
LMR
PRE
WRITE A
MR
on
Write A
power-
Active
down
Write
CKE LOW
WRITE
LMR
CKE HIGH
4
WRITE A
PRE
precharged
Precharge
all banks
PREALL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
active
ACT
Row
PRE
Idle
READ A
PRE = PRECHARGE
PREALL = PRECHARGE all banks
READ A = READ with auto precharge
REFA = AUTO REFRESH
REFS = Enter self refresh
REFSX = Exit self refresh
WRITE A = WRITE with auto precharge
CKEH
READ
REFS
READ A
PRE
256Mb: x4, x8, x16 DDR SDRAM
REFSX
CKEL
READ
Precharge
REFA
refresh
power-
down
Self
BST
Read A
Burst
Read
stop
Automatic sequence
Command sequence
READ A
©2003 Micron Technology, Inc. All rights reserved.
refresh
Auto
READ
State Diagram
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