MT46V64M4P-75:G TR Micron Technology Inc, MT46V64M4P-75:G TR Datasheet - Page 65
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MT46V64M4P-75:G TR
Manufacturer Part Number
MT46V64M4P-75:G TR
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V64M4P-75G_TR.pdf
(93 pages)
Specifications of MT46V64M4P-75:G TR
Organization
64Mx4
Density
256Mb
Address Bus
15b
Access Time (max)
750ps
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
150mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
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Figure 28:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Command
Command
Command
Address
Address
Address
Consecutive READ Bursts
DQS
DQS
DQS
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
Notes:
Bank,
READ
Col n
Bank,
READ
Bank,
READ
Col n
Col n
T0
T0
T0
1. DO n (or b) = data-out from column n (or column b).
2. BL = 4 or BL = 8 (if BL = 4, the bursts are concatenated; if BL = 8, the second burst interrupts
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three (or seven) subsequent elements of data-out appear in the programmed order follow-
5. Shown with nominal
6. Example applies only when READ commands are issued to same device.
the first).
ing DO b.
CL = 2
NOP
NOP
NOP
T1
T1
T1
CL = 2.5
CL = 3
t
AC,
Bank,
Bank,
Bank,
READ
Col b
READ
Col b
READ
Col b
T2
T2
T2
t
DQSCK, and
63
DO
n
T2n
T2n
DO
n
T3
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T3
NOP
T3
NOP
t
DQSQ.
DO
n
T3n
T3n
T3n
Transitioning Data
256Mb: x4, x8, x16 DDR SDRAM
T4
NOP
T4
T4
NOP
NOP
DO
b
T4n
T4n
T4n
DO
©2003 Micron Technology, Inc. All rights reserved.
b
T5
T5
T5
NOP
NOP
NOP
DO
Don’t Care
b
T5n
T5n
T5n
Operations
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