MT41J256M4JP-15E:G Micron Technology Inc, MT41J256M4JP-15E:G Datasheet - Page 49

• Manufacturer Part Number: MT41J256M4JP-15E:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J256M4JP-15E:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / RoHS Status: Supplier Unconfirmed

AC Overshoot/Undershoot Specification
Table 24: Control and Address Pins
Table 25: Clock, Data, Strobe, and Mask Pins
Figure 16: Overshoot
Figure 17: Undershoot
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 16)
Maximum peak amplitude allowed for undershoot area
(see Figure 17)
Maximum overshoot area above V
Maximum undershoot area below V
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 16)
Maximum peak amplitude allowed for undershoot area
(see Figure 17)
Maximum overshoot area above V
Maximum undershoot area below V
Volts (V)
Volts (V)
V
DD
V
DD
DD
/V
SS
SS
SS
/V
DDQ
/V
(see Figure 16)
/V
(see Figure 17)
DDQ
SSQ
SSQ
(see Figure 16)
(see Figure 17)
Maximum amplitude
Maximum amplitude
49
DDR3-800
DDR3-800
0.67 Vns
0.67 Vns
0.25 Vns
0.25 Vns
Time (ns)
Time (ns)
Electrical Specifications – DC and AC
0.4V
0.4V
0.4V
0.4V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb: x4, x8, x16 DDR3 SDRAM
DDR3-1066
DDR3-1066
0.19 Vns
0.19 Vns
Undershoot area
0.5 Vns
0.5 Vns
Overshoot area
0.4V
0.4V
0.4V
0.4V
© 2006 Micron Technology, Inc. All rights reserved.
DDR3-1333
DDR3-1333
0.15 Vns
0.15 Vns
0.4 Vns
0.4 Vns
0.4V
0.4V
0.4V
0.4V
DDR3-1600
DDR3-1600
0.33 Vns
0.33 Vns
0.13 Vns
0.13 Vns
0.4V
0.4V
0.4V
0.4V