FS225R17KE3 Infineon Technologies, FS225R17KE3 Datasheet - Page 2

• Manufacturer Part Number: FS225R17KE3
• Description: IGBT Modules 1700V 225A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of FS225R17KE3

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2 V
• Continuous Collector Current At 25 C: 340 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1.4 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK+
• Ic (max): 225.0 A
• Vce(sat) (typ): 2.0 V
• Technology: IGBT3
• Housing: EconoPACK™ +
• Lead Free Status / RoHS Status: Not Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
;
2
2,
;
?
5g
2
$
:
5
b
i
: @
-
`
`
S "
@
@
"
%
@
%
@
%
F
%
%
$
%
$
%
%
"
"
%
lmm
F
%
@
%
@
4 _
4
%
lmm
@
;
%
%
%
%
"
FS225R17KE3
&'( ) *+,
-= )
5f )
5f )
5f )
-= ) I
-B/ )
5f )
-= ) I
-B/ )
5f )
-= ) I
-B/ )
c<HGAQ )
&. ) *+,
&. )
&. ) *+,
< )
j ) jk E p`jkqkmU D&j
2
2
* :4 -B/ )
* :4 -B/ )
* :4
* :4
* :4
-4 < )
* -
* -
* -
+,4 lmm ) I9 O
-
-
-
D
DU ^!W D
fD
fD
fD
) I* :DM
) I* :DM
) I* :DM
-
-
4 &'( )
cdTQHGQ )
2
*+,
DU I34 * !WWr
DU ^!W
&'( ) *+,
&'( )
&'( ) *+,
&'( )
&'( ) *+,
&'( )
&'( ) *+,
&'( )
*+,
*+,
*+,
*+,
`jkqkm
n D
-==>
5f=>
#TQh
;jk
5=>
-f
LT
AJ.e
5g
AJa.
5f
Vorläufige Daten
preliminary data
jk
*
39
991*
*34*
I34
9 4
* 4
*4
4 39
1
43
4I
*
K
3*
*
4
4 K !D
*
4
E
E
!D
:g
M,
M,
"O
o
-
:
:
-
-
:
:
!
[
[