FS50R12KE3 Infineon Technologies, FS50R12KE3 Datasheet - Page 7

• Manufacturer Part Number: FS50R12KE3
• Description: IGBT Modules 1200V 50A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of FS50R12KE3

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Continuous Collector Current At 25 C: 75 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 270 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: ECONO 2
• Ic (max): 50.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EconoPACK™ 2
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

IGBT-Module
IGBT-Modules
Transienter Wärmewiderstand
Transient thermal impedance
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
Technische Information / technical information
125
100
75
50
25
0,01
0
0,1
r
r
0
1
0,001
i
i
τ
τ
[K/W] : Diode
[K/W] : IGBT
i
i
[s] : Diode
[s] : IGBT
i
200
IC,Chip
IC,Modul
0,01
5,077E-02
2,345E-03
7,637E-02
3,333E-03
400
1
FS50R12KE3
7 (8)
600
7,893E-02
2,820E-01
4,933E-01
3,429E-02
V
CE
t [s]
2
0,1
[V]
800
V
Z
GE
2,032E-01
2,820E-02
1,421E-01
1,294E-01
thJC
=±15V, R
3
1000
= f (t)
1
Zth : IGBT
Zth : Diode
G
=18Ω, T
1,142E-01
1,128E-01
4,501E-02
7,662E-01
1200
DB_FS50R12KE3_ 3.0.xls
4
vj
=125°C
1400
2002-09-03
10