BSM75GAL120DN2 Infineon Technologies, BSM75GAL120DN2 Datasheet - Page 5

• Manufacturer Part Number: BSM75GAL120DN2
• Description: IGBT Modules 1200V 75A CHOPPER
• Manufacturer: Infineon Technologies

Specifications of BSM75GAL120DN2

• Configuration: Single
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 75 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 625 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: IS4 ( 34mm )
• Ic (max): 75.0 A
• Vce(sat) (typ): 2.5 V
• Technology: IGBT2 Standard
• Housing: 34 mm
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

Update of Drawing Sep-21-98
IGBT-Module
IGBT-Modules
GAL type
GAR type
Gehäusemaße / Schaltbild
Package outline / Circuit diagram
PIN 6 and 7
GAL type
only
PIN 4 and 5
GAR type
only