BSM 200 GB 120 DN2 Infineon Technologies, BSM 200 GB 120 DN2 Datasheet - Page 4
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BSM 200 GB 120 DN2
Manufacturer Part Number
BSM 200 GB 120 DN2
Description
Manufacturer
Infineon Technologies
Datasheet
1.BSM_200_GB_120_DN2.pdf
(11 pages)
Specifications of BSM 200 GB 120 DN2
Channel Type
N
Configuration
Dual
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Compliant
BSM 200 GB 120 DN2
Power dissipation
P
parameter: T
P
Collector current
I
parameter: V
C
tot
I
tot
C
= (T
= (T
1500
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
300
260
240
220
200
180
160
140
120
100
80
60
40
20
W
A
0
0
C
0
0
)
C
)
20
20
j
GE
150 °C
40
40
15 V , T
60
60
j
80
80
150 °C
100
100
120
120
T
T
°C
°C
C
C
160
160
4
Safe operating area
I
parameter: D = 0, T
Transient thermal impedance
Z
parameter: D = t
Z
C
thJC
I
th JC
C
= (V
K/W
10
10
10
10
10
10
10
10
10
10
= (t
A
-1
-2
-3
-4
-5
3
2
1
0
0
CE
10
10
0
-5
)
p
)
single pulse
10
p
10
-4
/ T
1
C
= 25°C , T
10
-3
10
2
10
j
-2
IGBT
DC
150 °C
t
10
p = 49.0µs
Oct-21-1997
D = 0.50
10
3
100 µs
1 ms
10 ms
V
t
-1
p
0.20
0.10
0.05
0.02
0.01
CE
V
s
10
0