BSM30GD60DLC Infineon Technologies, BSM30GD60DLC Datasheet - Page 7

• Manufacturer Part Number: BSM30GD60DLC
• Description: IGBT Modules 600V 30A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of BSM30GD60DLC

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 40A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.95 V
• Continuous Collector Current At 25 C: 40 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 135 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2A
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,01
0,1
10
1
0,001
80
60
40
20
0
0
Transienter Wärmewiderstand
Transient thermal impedance
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
r
r
i
i
[K/kW]
i
[K/kW]
i
[sec]
[sec]
i
100
: IGBT
: IGBT
: Diode
: Diode
0,01
BSM 30 GD 60 DLC
200
0,0018
0,0487
0,1
493,4
38,1
1
IC,Modul
IC,Chip
300
7 (8)
V
0,0240
0,0169
471,6
473,2
CE
400
2
t [sec]
1
[V]
Z
thJC
R
= f (t)
G,off
500
= 6,8
0,0651
0,1069
317,2
297,2
3
, T
10
vj
= 125°C
Zth:IGBT
Zth:Diode
600
0,6626
0,9115
136,3
73,1
4
BSM 30 GD 60 DLC
700
100
2006-01-31