TIM5964-60SL Toshiba, TIM5964-60SL Datasheet

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TIM5964-60SL

Manufacturer Part Number
TIM5964-60SL
Description
Manufacturer
Toshiba
Datasheet

Specifications of TIM5964-60SL

Configuration
Single
Gate-source Voltage (max)
5V
Drain-source Volt (max)
15V
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Compliant

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MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
FEATURES
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Recommended Gate Resistance(Rg) : 28 Ω (Max.)
LOW INTERMODULATION DISTORTION
HIGH POWER
IM3=-45 dBc at Pout= 36.5dBm
Single Carrier Level
P1dB=48.0dBm at 5.9GHz to 6.4GHz
CHARACTERISTICS
CHARACTERISTICS
SYMBOL
SYMBOL
R
V
V
G
P
ΔTch
I
I
η
I
th(c-c)
IM
GSoff
DS1
DS2
DSS
ΔG
gm
GSO
1dB
1dB
add
3
(VDS X IDS + Pin – P1dB)
V
I
V
I
V
V
I
Channel to Case
(Single Carrier Level)
DS
DS
GS
DS
DS
DS
GS
f = 5.9 to 6.4GHz
Two-Tone Test
CONDITIONS
CONDITIONS
= 12.0A
= 200mA
Po=36.5dBm
= -1.0mA
I
= 3V
=
=
= 0V
DS
V
X Rth(c-c)
3V
3V
DS
set≅9.5A
HIGH GAIN
G1dB=8.5dB at 5.9GHz to 6.4GHz
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
=10V
TIM5964-60SL
UNIT
UNIT
° C/W
dBm
dBc
dB
dB
° C
%
A
A
S
V
A
V
MIN.
47.0
MIN.
-1.0
-42
7.5
-5
TYP. MAX.
Rev. Aug. 2008
48.0
13.2
TYP. MAX.
-45
8.5
-1.8
41
0.6
20
38
15.0
±0.8
11.8
100
-3.0
0.8

TIM5964-60SL Summary of contents

Page 1

... X Rth(c-c) SYMBOL CONDITIONS 12. GSoff 200mA DSS -1.0mA GSO GS R Channel to Case th(c-c) TIM5964-60SL UNIT MIN. TYP. MAX. dBm 47.0 48.0 dB 7.5 8.5 ⎯ A 13.2 ⎯ ⎯ dB ⎯ dBc -42 -45 ⎯ ⎯ A ° C ⎯ ⎯ UNIT MIN. TYP. MAX. ⎯ -1.0 -1.8 ⎯ ...

Page 2

... CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-16G1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM5964-60SL SYMBOL UNIT ...

Page 3

... RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=10V IDS≅13.2A 49 Pin=39.5dBm 5.8 Output Power(Pout) vs. Input Power(Pin) 51 freq.=6.4GHz 50 V =10V DS I set≅9. TIM5964-60SL 5.9 6.0 6.1 6.2 Frequency(GHz) Pout ηadd 37 39 Pin(dBm) 3 6.3 6.4 6 ...

Page 4

... Power Dissipation(PT) vs. Case Temperature(Tc) 200 100 IM3 vs. Power Characteristics -10 V =10V DS I set≅9.5A DS freq.=6.4GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM5964-60SL 80 120 Tc( ° 200 160 40 42 ...

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