TIM1414-15-252 Toshiba, TIM1414-15-252 Datasheet
TIM1414-15-252
Specifications of TIM1414-15-252
Related parts for TIM1414-15-252
TIM1414-15-252 Summary of contents
Page 1
... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM1414-15-252 BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE SYMBOL ...
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... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-11C1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM1414-15-252 SYMBOL ...
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... RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=9V IDS≅4.5A 42 Pin=35.0 dBm Output Power(Pout) vs. Input Power(Pin) 43 freq.=14.5GHz 42 VDS=9V IDS≅4. TIM1414-15-252 13.75 14.1 Frequency(GHz) Pout ηadd 32 34 Pin(dBm ...
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... Power Dissipation(PT) vs. Case Temperature(Tc TIM1414-15-252 80 120 Tc( ° 160 200 ...