SPA11N80C3XK Infineon Technologies, SPA11N80C3XK Datasheet - Page 3

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SPA11N80C3XK

Manufacturer Part Number
SPA11N80C3XK
Description
Manufacturer
Infineon Technologies
Type
Power MOSFETr
Datasheet

Specifications of SPA11N80C3XK

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.45Ohm
Drain-source On-volt
800V
Gate-source Voltage (max)
±20V
Drain Current (max)
11A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220FP
Power Dissipation
41W
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPA11N80C3XKSA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 2.9
1)
2)
3)
4)
5)
6)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Effective output capacitance, energy
related
Effective output capacitance, time
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
J-STD20 and JESD22
Pulse width t
Repetitive avalanche causes additional power losses that can be calculated as P
I
C
C
SD
o(er)
o(tr)
=I
D
is a fixed capacitance that gives the same charging time as C
, di/dt=200A/µs, V
5)
6)
is a fixed capacitance that gives the same stored energy as C
p
limited by T
DClink
j,max
= 400V, V
peak
Symbol Conditions
C
C
C
C
t
t
t
t
Q
Q
Q
V
V
t
Q
I
d(on)
r
d(off)
f
rr
rrm
<V
plateau
SD
iss
oss
o(er)
o(tr)
gs
gd
g
rr
(BR)DSS
V
f =1 MHz
V
to 480 V
V
V
R
V
V
V
T
V
I
di
, T
F
j
GS
GS
DD
GS
DD
GS
GS
R
=I
G
=25 °C
F
j
page 3
<T
=400 V,
/dt =100 A/µs
=7.5 ? , T
=0 V, V
=0 V, V
=400 V,
=0/10 V, I
=640 V, I
=0 to 10 V
=0 V, I
S
jmax
=11 A,
, identical low side and high side switch
F
DS
DS
=I
j
=25 °C
D
=100 V,
=0 V
D
S
=11 A,
oss
oss
=11 A,
=11 A,
while V
while V
DS
DS
min.
is rising from 0 to 80% V
AV
is rising from 0 to 80% V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
=E
AR
*f.
Values
1600
typ.
140
550
5.5
65
50
25
15
72
10
30
64
10
33
8
1
SPP11N80C3
max.
1.2
85
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DSS.
2008-10-15
DSS.
Unit
pF
ns
nC
V
V
ns
µC
A

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