SPA11N80C3XK Infineon Technologies, SPA11N80C3XK Datasheet - Page 5

• Manufacturer Part Number: SPA11N80C3XK
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of SPA11N80C3XK

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.45Ohm
• Drain-source On-volt: 800V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 11A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220FP
• Power Dissipation: 41W
• Lead Free Status / RoHS Status: Compliant

Rev. 2.9
5 Typ. output characteristics
I
parameter: V
7 Drain-source on-state resistance
R
D
DS(on)
=f(V
1.2
0.8
0.6
0.4
0.2
21
18
15
12
DS
=f(T
9
6
3
0
1
0
-60
); T
0
j
); I
j
=150 °C; t
GS
D
-20
=7.1 A; V
5
20
98 %
p
=10 µs
10
GS
V
T
=10 V
DS
j
60
[°C]
typ
[V]
4.5 V
5 V
15
100
5.5 V
20 V
20
6 V
140
10 V
180
25
page 5
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. transfer characteristics
I
parameter: T
D
DS(on)
=f(V
1.8
1.6
1.4
1.2
40
30
20
10
GS
=f(I
2
1
0
0
0
); |V
D
4 V
); T
DS
j
GS
4.5 V
j
|>2|I
=150 °C
5
2
5 V
D
|R
10
DS(on)max
4
V
I
GS
D
15
[A]
[V]
; t
6 V
p
6
=10 µs
20
SPP11N80C3
6.5 V
25 °C
150 °C
8
25
2008-10-15
20 V
10 V
30
10