MT46V64M8P-5BIT:F Micron Technology Inc, MT46V64M8P-5BIT:F Datasheet - Page 80
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MT46V64M8P-5BIT:F
Manufacturer Part Number
MT46V64M8P-5BIT:F
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V64M8P-5BITF.pdf
(91 pages)
Specifications of MT46V64M8P-5BIT:F
Organization
64Mx8
Density
512Mb
Address Bus
15b
Access Time (max)
700ps
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
2.6V
Package Type
TSOP
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.5V
Supply Current
195mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
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Figure 45:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Command
Address
t DQSS (NOM)
t DQSS (MIN)
t DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-PRECHARGE – Uninterrupting
Notes:
Bank a,
WRITE
Col b
T0
t DQSS
t DQSS
t DQSS
1. DI b = data-in for column b.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. An uninterrupted burst of 4 is shown.
4.
5. The PRECHARGE and WRITE commands are to the same device. However, the PRECHARGE
6. A10 is LOW with the WRITE command (auto precharge is disabled).
t
and WRITE commands may be to different devices, in which case
the PRECHARGE command could be applied earlier.
DI
b
WR is referenced from the first positive CK edge after the last data-in pair.
NOP
DI
T1
b
DI
b
T1n
NOP
T2
T2n
80
NOP
T3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t WR
NOP
T4
512Mb: x4, x8, x16 DDR SDRAM
Transitioning Data
(a or all)
Bank,
T5
PRE
©2000 Micron Technology, Inc. All rights reserved.
t
WR is not required, and
t RP
T6
NOP
Operations
Don’t Care
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