TIM5964-60SL-422 Toshiba, TIM5964-60SL-422 Datasheet

TIM5964-60SL-422

Manufacturer Part Number

TIM5964-60SL-422

Description

Manufacturer

Toshiba

Datasheet

1.TIM5964-60SL-422.pdf (4 pages)

Specifications of TIM5964-60SL-422

Configuration

Single

Gate-source Voltage (max)

Drain-source Volt (max)

15V

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Lead Free Status / RoHS Status

Compliant

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Manufacturer

Quantity

Price

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Part Number:

TIM5964-60SL-422

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Transcom

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Meier Automation Equipment Co., Limited

Part Number:

TIM5964-60SL-422

Manufacturer:

TOSHIBA/东芝

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MICROWAVE SEMICONDUCTOR

TECHNICAL DATA

ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )

Output Power at 1dB

Compression Point

Power Gain at 1dB

Compression Point

Drain Current

Gain Flatness

Power Added Efficiency

3rd Order Intermodulation

Distortion

Drain Current

Channel Temperature Rise

Recommended Gate Resistance(Rg) : 28 Ω (Max.)

Transconductance

Pinch-off Voltage

Saturated Drain Current

Gate-Source Breakdown

Voltage

Thermal Resistance

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

FEATURES

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

LOW INTERMODULATION DISTORTION

HIGH POWER

IM3=-45 dBc at Pout= 36.5dBm

Single Carrier Level

P1dB=48.0dBm at 5.85GHz to 6.75GHz

CHARACTERISTICS

SYMBOL

ΔTch

th(c-c)

GSoff

DS1

DS2

DSS

ΔG

GSO

1dB

add

(VDS X IDS + Pin – P1dB)

Channel to Case

f = 5.85 to 6.75GHz

(Single Carrier Level)

Two-tone Test

CONDITIONS

= 12.0A

= 200mA

Po=36.5dBm

= -1.0mA

= 3V

= 0V

VDS= 10V

X Rth(c-c)

BROAD BAND INTERNALLY MATCHED FET

HERMETICALLY SEALED PACKAGE

set≅9.5A

G1dB=8.0dB at 5.85GHz to 6.75GHz

HIGH GAIN

MICROWAVE POWER GaAs FET

TIM5964-60SL-422

UNIT

° C/W

dBm

dBc

° C

MIN.

47.0

MIN.

-1.0

-40

7.0

⎯

-5

TYP. MAX.

48.0

13.2

TYP. MAX.

-45

8.0

-1.8

Rev. Jul. 2006

0.6

⎯

15.0

±0.8

11.8

100

-3.0

⎯

0.8

⎯

Related parts for TIM5964-60SL-422

TIM5964-60SL-422 Summary of contents

Page 1

... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM5964-60SL-422 HIGH GAIN G1dB=8.0dB at 5.85GHz to 6.75GHz BROAD BAND INTERNALLY MATCHED FET ...

Page 2

... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-16G1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM5964-60SL-422 SYMBOL ...

Page 3

... RF PERFORMANCE Output Power (Pout) vs. Frequency V =10V DS ≅13. Pin=40.0dBm 5.6 Output Power(Pout) vs. Input Power(Pin) 51 freq.=6.75GHz 50 V =10V DS I set≅9. TIM5964-60SL-422 5.8 6.0 6.2 6.4 Frequency(GHz) Pout ηadd 37 39 Pin(dBm) 3 6.6 6.8 7 ...

Page 4

... Power Dissipation(PT) vs. Case Temperature(Tc) 200 100 IM3 vs. Power Characteristics -10 V =10V DS I set≅9.5A DS freq.=6.75GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM5964-60SL-422 80 120 Tc( ° 200 160 40 42 ...

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