MCP4661T-502E/ML Microchip Technology, MCP4661T-502E/ML Datasheet - Page 65
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MCP4661T-502E/ML
Manufacturer Part Number
MCP4661T-502E/ML
Description
IC DGTL POT 5K 256TAPS 16-QFN
Manufacturer
Microchip Technology
Datasheet
1.MCP4541T-502EMF.pdf
(92 pages)
Specifications of MCP4661T-502E/ML
Package / Case
16-QFN
Taps
257
Resistance (ohms)
5K
Number Of Circuits
2
Temperature Coefficient
150 ppm/°C Typical
Memory Type
Non-Volatile
Interface
I²C, 2-Wire Serial
Voltage - Supply
2.7 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Resistance In Ohms
5K
Number Of Pots
Dual
Taps Per Pot
256
Resistance
5 KOhms
Wiper Memory
Non Volatile
Digital Interface
Serial (2-Wire, I2C)
Operating Supply Voltage
2.5 V, 3.3 V, 5 V
Supply Current
2.5 uA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Supply Voltage (max)
5.5 V
Supply Voltage (min)
1.8 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
MCP4661T-502E/MLTR
7.8
These commands are special cases of the High Volt-
age
ment Wiper
locations 02h, 03h, and 0Fh. This command is used to
enable or disable either the software Write Protect,
wiper 0 WiperLock Technology, or wiper 1 WiperLock
Technology.
the High Voltage command and the result of those
commands on the non-volatile WP, WL0, 0r WL1 bits.
TABLE 7-6:
FIGURE 7-9:
FIGURE 7-10:
© 2008 Microchip Technology Inc.
Note 1:
05h - 0Eh
Address
Memory
Decrement Wiper
04h
00h
01h
02h
03h
0Fh
Modify Write Protect or WiperLock
Technology (High Voltage)
Enable and Disable
(1)
Reserved addresses: Increment or Decrement commands are invalid for these addresses.
Table 7-6
(1)
commands to the non-volatile memory
ADDRESS MAP TO MODIFY WRITE PROTECT AND WIPERLOCK TECHNOLOGY
High Voltage
Wiper 0 register is incremented
Wiper 1 register is decremented
WL0 is enabled
WL1 is enabled
TCON register not changed
Reserved
WP is enabled
I
I
shows the memory addresses,
S
2
2
S
C Disable Command Sequence.
C Enable Command Sequence.
and the High Voltage
0 1 0
0 1 0
Fixed
Address
Fixed
Address
Control Byte
Control Byte
Decrement Wiper
1
1
A2 A1 A0 0
A2 A1 A0 0
Variable
Address
Variable
Address
Incre-
MCP454X/456X/464X/466X
Write bit
Write bit
A
A
Command’s and Result
AD AD AD AD
AD AD AD AD
3
3
Device
Memory
Address
Device
Memory
Address
2
7.8.1
Figure 7-9
the formats for a single Modify Write Protect or Wiper-
Lock Technology command.
A Modify Write Protect or WiperLock Technology
Command will only start an EEPROM write cycle (t
after a properly formatted Command has been
received and the Stop condition occurs.
During an EEPROM write cycle, only serial commands
to Volatile memory (addresses 00h, 01h, 04h, and 05h)
are accepted. All other serial commands are ignored
until the EEPROM write cycle (t
allows the Host Controller to operate on the Volatile
Wiper registers and the TCON register, and to Read
the Status Register. The EEWA bit in the Status register
indicates the status of an EEPROM Write Cycle.
2
Enable Command
1
Disable Command
1
High Voltage
Wiper 0 register is incremented
Wiper 1 register is incremented
WL0 is disabled
WL1 is disabled
TCON register not changed
Reserved
WP is disabled
0
0
Command (Decrement)
Command (Increment)
1
0
(Disable) and
SINGLE MODIFY (ENABLE OR
DISABLE) WRITE PROTECT OR
WIPERLOCK TECHNOLOGY (HIGH
VOLTAGE)
0 X X A P
1 X X A P
Increment Wiper
Figure 7-10
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DS22107A-page 65
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