MCP14E8-E/P Microchip Technology, MCP14E8-E/P Datasheet

MCP14E8-E/P

Manufacturer Part Number

MCP14E8-E/P

Description

3A MOSFET Driver 8 PDIP .300in TUBE

Manufacturer

Microchip Technology

Datasheet

1.MCP14E8-EP.pdf (30 pages)

Specifications of MCP14E8-E/P

Leaded Process Compatible

Yes

Rohs Compliant

Yes

Peak Reflow Compatible (260 C)

Yes

Module Configuration

Low Side

Peak Output Current

Output Resistance

5ohm

Input Delay

45ns

Output Delay

45ns

Supply Voltage Range

4.5V To 18V

Driver Case Style

DIP

No. Of Pins

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MCP14E8-E/P

Manufacturer:

MICROCHIP

Quantity:

12 000

Current page: 1 of 30
Download datasheet (749Kb)

Features

• High Peak Output Current: 2.0A (typical)

• Independent Enable Function for Each Driver

• Wide Input Supply Voltage Operating Range:

• Low Shoot-Through/Cross-Conduction Current in

• High Capacitive Load Drive Capability:

• Short Delay Times: 45 ns (typical)

• Low Supply Current:

• Latch-up Protected: Passed JEDEC JESD78A

• Logic Input will Withstand Negative Swing,

• Space-Saving Packages:

Applications

• Switch Mode Power Supplies

• Pulse Transformer Drive

• Line Drivers

• Motor and Solenoid Drive

Output

- 4.5V to 18V

Output Stage

- t

- With Logic ‘1’ Input/Enable – 1 mA (typical)

- With Logic ‘0’ Input/Enable – 300 µA (typical)

up to 5V

- 8-Lead SOIC, PDIP, 6x5 DFN

: 15 ns with 1000 pF load (typical)

: 12 ns with 1000 pF load (typical)

2.0A Dual High-Speed Power MOSFET Driver With Enable

MCP14E6/7/8

General Description

The MCP14E6/7/8 devices are high-speed MOSFET

drivers, capable of providing 2.0A of peak current. The

dual inverting, dual non-inverting and complementary

outputs are directly controlled from either TTL or

CMOS (3V to 18V). These devices also feature low

shoot-through

propagation delays, which make them ideal for high

switching frequency applications.

The MCP14E6/7/8 devices operate from a 4.5V to 18V

single power supply and can easily charge and

discharge 1000 pF of MOSFET gate capacitance. They

provide low enough impedances, in both the ON and

OFF states, to ensure the MOSFETs’ intended state

will not be affected, even by large transients.

The additional control of the MCP14E6/7/8 outputs is

allowed by the use of separate enable functions. The

ENB_A and ENB_B pins are active-high and are

internally pulled up to V

for standard operation.

The MCP14E6/7/8 dual output, 2.0A driver family is

offered in both surface-mount and pin-through-hole

packages with a -40

The low thermal resistance of the thermally enhanced

DFN package allows greater power dissipation

capability for driving heavier capacitive or resistive

loads.

These devices are highly latch-up resistant under any

conditions within their power and voltage ratings. They

are not subject to damage when up to 5V of noise

spiking (of either polarity) occurs on the ground pin.

The devices are fully latch-up protected when tested

according to JEDEC JESD78A. All terminals are fully

protected against Electrostatic Discharge (ESD), up to

4 kV (HBM) or 400V (MM).

current,

C to +125

. The pins may be left floating

fast

C temperature rating.

rise/fall

DS25006A-page 1

times

and

Related parts for MCP14E8-E/P

MCP14E8-E/P Summary of contents

Page 1

... Applications • Switch Mode Power Supplies • Pulse Transformer Drive • Line Drivers • Motor and Solenoid Drive © 2011 Microchip Technology Inc. MCP14E6/7/8 General Description The MCP14E6/7/8 devices are high-speed MOSFET drivers, capable of providing 2.0A of peak current. The dual inverting, dual non-inverting and complementary outputs are directly controlled from either TTL or CMOS (3V to 18V) ...

Page 2

... DFN* ENB_B ENB_A 1 OUT GND OUT B Table 3-1. Inverting Non-Inverting 4.7 V MCP14E6 Dual Inverting MCP14E7 Dual Non-Inverting MCP14E8 One Inverting, One Non-Inverting MCP14E7 MCP14E6 MCP14E8 ENB_B ENB_B ENB_B 8 7 OUT A OUT A OUT OUT B OUT B OUT Output © 2011 Microchip Technology Inc. ...

Page 3

... Tested during characterization, not production tested. 2: Package power dissipation is dependent on the copper pad area of the PCB. 3: © 2011 Microchip Technology Inc. † Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of ...

Page 4

... ENB_A = ENB_B = Low 3V, IN_A IN_B ENB_A = ENB_B = Low (2) ≤ 18V. DD Conditions 0V ≤ V ≤ Test DC Test mA 18V OUT mA 18V OUT DD Figure 4-1, Figure 4- 1000 pF L Figure 4-1, Figure 4- 1000 pF L Figure 4-1, Figure 4-2 Figure 4-1, Figure 4-2 © 2011 Microchip Technology Inc. ...

Page 5

... Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ V Parameters Temperature Ranges Specified Temperature Range Maximum Junction Temperature Storage Temperature Range Package Thermal Resistances Thermal Resistance, 8L-6x5 DFN Thermal Resistance, 8L-PDIP Thermal Resistance, 8L-SOIC © 2011 Microchip Technology Inc. Min Typ Max Units 2.4 — — — — ...

Page 6

Page 7

... Capacitive Load (pF) FIGURE 2-2: Rise Time vs. Capacitive Load 18V 1,000pF LOAD RISE 15 t FALL 10 -40 -25 - 110 125 Temperature (°C) FIGURE 2-3: Rise and Fall Times vs. Temperature. © 2011 Microchip Technology Inc. ≤ 18V. DD 180 160 140 ) s 120 ( n e 100 1,000 470 ...

Page 8

... FIGURE 2-11: Temperature +125° +25° FIGURE 2-12: Low) vs. Supply Voltage 110 125 Temperature (°C) Propagation Delay Time vs. Input/Enable = 1 Input/Enable = 110 125 Temperature (°C) Quiescent Current vs (MCP14E6 (MCP14E7 Supply Voltage (V) Output Resistance (Output © 2011 Microchip Technology Inc. ...

Page 9

... Capacitive Load (pF) FIGURE 2-14: Supply Current vs. Capacitive Load kHz 100 kHz 1000 kHz 20 15 500 kHz 1000 Capacitive Load (pF) FIGURE 2-15: Supply Current vs. Capacitive Load. © 2011 Microchip Technology Inc. ≤ 18V. DD 100 200 kHz 10000 FIGURE 2-16: Frequency 200 kHz ...

Page 10

... For a single driver, divide the stated value by 2. For a single transition of a single driver, divide the stated value by 4. FIGURE 2-23: Supply Voltage. V EN_L 110 125 Temperature (°C) Enable Hysteresis vs Supply Voltage(V) Crossover Energy vs. © 2011 Microchip Technology Inc. ...

Page 11

... The low output impedance ensures the DD gate of the MOSFET will stay in the intended state, even during large transients. © 2011 Microchip Technology Inc. Table 3-1. MCP14E8 ENB_A Ouptut A Enable IN A Input A GND Ground IN B Input B ...

Page 12

Page 13

... R driver receiving an enable signal and the output 90% reacting. These propagation delays, t graphically represented in 10% MCP14E6/7 18V DD 0.1 µF 1 µF Ceramic Output C = 1000 pF L Output C = 1000 pF L MCP14E6 ½ MCP14E8 90% 90% 90 10% 10% Non-Inverting Driver Timing that driver output is enabled EN_H ), EN_L and t ...

Page 14

... The power dissipation caused by a capacitive load is a direct function of frequency, total capacitive load and supply voltage. The power lost in the MOSFET driver for a complete charging and discharging cycle of a MOSFET is: EQUATION 4-2: Where Switching frequency MCP14E7 MCP14E8 OUT B OUT A OUT ...

Page 15

... Quiescent Current in the Low State MOSFET Driver Supply Voltage V DD © 2011 Microchip Technology Inc. 4.6.3 OPERATING POWER DISSIPATION The operating power dissipation occurs each time the MOSFET driver output transitions, because for a very short period of time, both MOSFETs in the output stage are ON, simultaneously ...

Page 16

Page 17

... In the event the full Microchip part number cannot be marked on one line, it will Note: be carried over to the next line, thus limiting the number of available characters for customer-specific information. © 2011 Microchip Technology Inc. MCP14E6/7/8 Example MCP14E6 E/MF^^ ...

Page 18

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Page 21

... Microchip Technology Inc. MCP14E6/7/8 DS25006A-page 21 ...

Page 22

Page 23

... Microchip Technology Inc. MCP14E6/7/8 DS25006A-page 23 ...

Page 24

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Page 26

Page 27

... MOSFET Driver, Extended Temperature, 8LD SOIC package. a) MCP14E8-E/MF: 2.0A Dual Inverting MOSFET Driver, Extended Temperature, 8LD 6x5 DFN package. b) MCP14E8-E/P: 2.0A Dual Inverting MOSFET Driver, Extended Temperature, 8LD PDIP package. c) MCP14E8-E/SN: 2.0A Dual Inverting MOSFET Driver, Extended Temperature, 8LD SOIC package. ...

Page 28

Page 29

... PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance, TSHARC, UniWinDriver, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. ...

Page 30

... Philippines - Manila Tel: 63-2-634-9065 Fax: 63-2-634-9069 Singapore Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan - Hsin Chu Tel: 886-3-6578-300 Fax: 886-3-6578-370 Taiwan - Kaohsiung Tel: 886-7-213-7830 Fax: 886-7-330-9305 Taiwan - Taipei Tel: 886-2-2500-6610 Fax: 886-2-2508-0102 Thailand - Bangkok Tel: 66-2-694-1351 Fax: 66-2-694-1350 © 2011 Microchip Technology Inc. 02/18/11 ...

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