DAC1003D160HW/C1,5 NXP Semiconductors, DAC1003D160HW/C1,5 Datasheet - Page 9

IC DAC 10BIT 160MSPS 80-HTQFP

DAC1003D160HW/C1,5

Manufacturer Part Number
DAC1003D160HW/C1,5
Description
IC DAC 10BIT 160MSPS 80-HTQFP
Manufacturer
NXP Semiconductors
Datasheet

Specifications of DAC1003D160HW/C1,5

Settling Time
16ns
Number Of Bits
10
Data Interface
Parallel
Number Of Converters
2
Voltage Supply Source
Analog and Digital
Power Dissipation (max)
540mW
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
80-TQFP Exposed Pad, 80-eTQFP, 80-HTQFP, 80-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
935286682518
DAC1003D160HW/C1-T
DAC1003D160HW/C1-T

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DAC1003D160HW/C1,5
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
NXP Semiconductors
Table 5.
V
V
Figure
[1]
DAC1003D160_2
Product data sheet
Symbol
I
E
E
SFDR
IMD2
IMD3
THD
NSD
S/N
ACPR
n(o)
CCD
CCD
G
2H
3H
offset
G
IQ
Guaranteed by design.
= V
= V
10; unless otherwise specified.
CCA
CCA
Characteristics
Parameter
output noise current
offset error
gain error
IQ gain mismatch
spurious free dynamic
range
second harmonic level
third harmonic level
second-order
intermodulation distortion
third-order intermodulation
distortion
total harmonic distortion
noise spectral density
signal-to-noise ratio
adjacent channel power
ratio
= 3.0 V to 3.6 V; AGND and DGND connected together; T
= 3.3 V, I
O(fs)
Table 6.
Band gap disable (GAPD)
LOW
HIGH
= 20 mA and T
…continued
Band gap
Conditions
relative to full-scale
relative to full-scale
between I and Q, relative to
full-scale
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
baseband; 5 MHz channel spacing; B = 3.84 MHz
f
f
amb
clk
o
o
o
o
o
o
o
clk
o
clk
o
clk
o
o
clk
o
o
o
clk
o
o
o
o
o
= 2.5 MHz at 0 dBFS
= 5 MHz at 0 dBFS
= 13 MHz at 0 dBFS
= 5 MHz
= 13 MHz
= 5 MHz
= 13 MHz
2 = 12 MHz; B = Nyquist
2 = 12 MHz
= 2.5 MHz
= 5 MHz
= 2.5 MHz
= 5 MHz
= 19 MHz
= 2.5 MHz
= 5 MHz
= 19 MHz
= 2.5 MHz
= 20 MHz
= 80 MHz; B = Nyquist
= 80 MHZ; f
= 80 MHz; f
= 80 MHz; B = Nyquist; T
= 80 MHz
= 80 Msample/s; B = Nyquist
= 25 C; dynamic parameters measured using output schematic given in
Rev. 02 — 13 August 2008
o
o
1 = 10 MHz;
1 = 10 MHz;
Band gap input/output (GAPOUT)
output (V
input
Dual 10 bits DAC, up to 160 MHz, 2 x interpolation
GAPOUT
amb
amb
= 25 C
= 40 C to +85 C; typical values measured at
= 1.2 V)
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
68
-
-
-
-
70
-
-
-
5.4
DAC1003D160
Typ
120
-
80
72
64
73
65
88
86
65
84
75
71
80
80
78
60
61
0.3
0.2
155
155
153
Max
-
-
+5.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Internal band gap
enable
disable
© NXP B.V. 2008. All rights reserved.
Unit
pA/ Hz
%
%
%
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBm/Hz
dBm/Hz
dBm/Hz
dBc
dBc
dBc
dBc
dBc
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