MT47H32M8BP-5E IT:B Micron Technology Inc, MT47H32M8BP-5E IT:B Datasheet - Page 64
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MT47H32M8BP-5E IT:B
Manufacturer Part Number
MT47H32M8BP-5E IT:B
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H32M8BP-5E_ITB.pdf
(128 pages)
Specifications of MT47H32M8BP-5E IT:B
Organization
32Mx8
Density
256Mb
Address Bus
15b
Access Time (max)
600ps
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
125mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant
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Commands
Truth Tables
Table 36: Truth Table – DDR2 Commands
Notes: 1–3 apply to the entire table
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
Function
LOAD MODE
REFRESH
SELF REFRESH entry
SELF REFRESH exit
Single bank
PRECHARGE
All banks PRECHARGE
Bank ACTIVATE
WRITE
WRITE with auto
precharge
READ
READ with auto
precharge
NO OPERATION
Device DESELECT
Power-down entry
Power-down exit
Notes:
Previous
Cycle
The following tables provide a quick reference of available DDR2 SDRAM commands,
including CKE power-down modes and bank-to-bank commands.
H
H
H
H
H
H
H
H
H
H
H
H
H
L
L
1. All DDR2 SDRAM commands are defined by states of CS#, RAS#, CAS#, WE#, and CKE at
2. The state of ODT does not affect the states described in this table. The ODT function is
3. “X” means “H or L” (but a defined logic level) for valid I
4. BA2 is only applicable for densities ≥1Gb.
5. An n is the most significant address bit for a given density and configuration. Some larg-
CKE
the rising edge of the clock.
not available during self refresh. See ODT Timing (page 122) for details.
er address bits may be “Don’t Care” during column addressing, depending on density
and configuration.
Current
Cycle
H
H
H
H
H
H
H
H
H
H
X
X
H
L
L
CS#
H
H
H
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
RAS# CAS#
H
H
H
H
H
H
H
H
X
X
X
X
L
L
L
L
L
L
64
X
H
H
H
H
H
X
X
H
X
H
L
L
L
L
L
L
L
Micron Technology, Inc. reserves the right to change products or specifications without notice.
WE#
256Mb: x4, x8, x16 DDR2 SDRAM
H
H
H
H
H
H
H
H
H
X
X
X
X
L
L
L
L
L
BA2–
BA0
BA
BA
BA
BA
BA
BA
BA
X
X
X
X
X
X
X
X
An–A11
Column
Column
Column
Column
address
address
address
address
DD
X
X
X
X
X
X
X
X
X
measurements.
Row address
©2003 Micron Technology, Inc. All rights reserved.
OP code
A10
X
X
X
H
H
H
X
X
X
X
L
L
L
Column
Column
Column
Column
address
address
address
address
Commands
A9–A0 Notes
X
X
X
X
X
X
X
X
X
4, 5, 6,
4, 5, 6,
4, 5, 6,
4, 5, 6,
4, 6
4, 7
6
4
8
8
8
8
9
9
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