K4S560832N-LC75000 Samsung Semiconductor, K4S560832N-LC75000 Datasheet
K4S560832N-LC75000
Specifications of K4S560832N-LC75000
Related parts for K4S560832N-LC75000
K4S560832N-LC75000 Summary of contents
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... For updates or additional information about Samsung products, contact your nearest Samsung office. All brand names, trademarks and registered trademarks belong to their respective owners. ⓒ 2010 Samsung Electronics Co., Ltd. All rights reserved Rev. 1.0, Apr. 2010 K4S560432N K4S560832N K4S561632N ...
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... K4S560432N K4S560832N K4S561632N Revision History Revision No. 1.0 - First Spec. Release datasheet History - 2 - Rev. 1.0 SDRAM Draft Date Remark Editor Apr. 2010 - S.H.Kim ...
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... K4S560432N K4S560832N K4S561632N Table Of Contents 256Mb N-die SDRAM 1. KEY FEATURES........................................................................................................................................................... 4 2. GENERAL DESCRIPTION ........................................................................................................................................... 4 3. ORDERING INFORMATION ........................................................................................................................................ 4 4. PACKAGE PHYSICAL DIMENSION ............................................................................................................................ 5 5. FUNCTIONAL BLOCK DIAGRAM ................................................................................................................................ 6 6. PIN CONFIGURATION (TOP VIEW) ............................................................................................................................ 7 7. INPUT/OUTPUT FUNCTION DESCRIPTION .............................................................................................................. 7 8. ABSOLUTE MAXIMUM RATINGS ............................................................................................................................... OPERATING CONDITIONS ................................................................................................................................... 8 10. CAPACITANCE .......................................................................................................................................................... 8 11 ...
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... RoHS compliant 2. GENERAL DESCRIPTION The K4S560432N / K4S560832N / K4S561632N is 268,435,456 bits synchronous high data rate Dynamic RAM organized 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, pro- grammable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory sys- tem applications ...
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... K4S560432N K4S560832N K4S561632N 4. PACKAGE PHYSICAL DIMENSION #54 #1 (1.50) 0.80TYP (0.71) [0.80 0.08] ± NOTE : REFERENCE Detail ASS’Y OUT QUALITY datasheet #28 #27 22.22 0.10 ± (10°) (10°) Detail A Detail B Detail B +0.10 +0.10 0.30 0.35 - 0.05 - 0.05 Figure 1. 54Pin TSOP(II) Package Dimension ...
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... K4S560432N K4S560832N K4S561632N 5. FUNCTIONAL BLOCK DIAGRAM Bank Select CLK ADD LCKE LRAS LCBR CLK CKE * Samsung Electronics reserves the right to change products or specification without notice. datasheet Data Input Register 16M 16M 16M 16M Column Decoder Latency & Burst Length Programming Register ...
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... K4S560432N K4S560832N K4S561632N 6. PIN CONFIGURATION (TOP VIEW) x16 DQ0 DQ0 DDQ DDQ DQ1 N.C DQ2 DQ1 DQ0 SSQ SSQ DQ3 N.C DQ4 DQ2 DDQ DDQ DQ5 N.C DQ6 DQ3 DQ1 SSQ SSQ DQ7 N LDQM N CAS CAS CAS RAS RAS RAS CS CS ...
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... K4S560432N K4S560832N K4S561632N 8. ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage temperature Power dissipation Short circuit current NOTE : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. ...
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... K4S560432N K4S560832N K4S561632N 11. DC CHARACTERISTICS (x4/x8) (Recommended operating condition unless otherwise noted 70°C) Parameter Symbol Operating current ICC1 (One bank active) ICC2P Precharge standby current in power-down mode ICC2PS CKE & CLK ≤ V Precharge standby current in non ICC2N power-down mode ICC3P Active standby current in power- down mode ICC3PS CKE & ...
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... K4S560432N K4S560832N K4S561632N 12. DC CHARACTERISTICS (x16) (Recommended operating condition unless otherwise noted 70°C) Parameter Symbol Operating current ICC1 (One bank active) ICC2P Precharge standby current in power-down mode ICC2PS CKE & CLK ≤ V Precharge standby current in non ICC2N power-down mode ICC3P Active standby current in power- down mode ICC3PS CKE & ...
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... K4S560432N K4S560832N K4S561632N 13. AC OPERATING TEST CONDITIONS Parameter Input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Output datasheet Value 2.4/0.4 1.4 tr/tf = 1/1 1.4 See Figure 3 3.3V 1200Ω ...
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... K4S560432N K4S560832N K4S561632N 14. OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) Parameter Row active to row active delay RAS to CAS delay Row precharge time Row active time Row cycle time Last data in to row precharge Last data in to Active delay Last data in to new col. address delay Last data in to burst stop Col ...
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... K4S560432N K4S560832N K4S561632N 15. AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol CAS latency=3 CLK cycle time tCC CAS latency=2 CAS latency=3 CLK to valid tSAC output delay CAS latency=2 CAS latency=3 Output data tOH hold time CAS latency=2 CLK high pulse width ...
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... K4S560432N K4S560832N K4S561632N 17. IBIS SPECIFICATION [ Table 2 ] IOH Characteristics (Pull-up) Voltage (V) 3.45 3.3 3.0 2.6 2.4 2.0 1.8 1.65 1.5 1.4 1.0 0.0 datasheet 166MHz 133MHz Min I (mA) 0.0 -21.1 -34.1 -58.7 -67.3 -73.0 -77.9 -80.8 -88.6 -93.0 0 0 -100 -200 ...
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... K4S560432N K4S560832N K4S561632N [ Table 3 ] IOL Characteristics (Pull-down) Voltage (V) 0.0 0.4 0.65 0.85 1.0 1.4 1.5 1.65 1.8 1.95 3.0 3.45 datasheet 166MHz 133MHz Min I (mA) 0.0 27.5 41.8 51.6 58.0 70.7 72.9 75.4 77.0 77.6 80.3 81.4 250 200 150 100 ...
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... K4S560432N K4S560832N K4S561632N [ Table Clamp @ CLK, CKE, CS, DQM & (V) DD 0.0 0.2 0.4 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 datasheet Voltage I (mA) Figure 6. Minimum V clamp current (Referenced (mA) 0.0 0.0 0.0 0.0 0.0 0.0 0.0 ...
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... K4S560432N K4S560832N K4S561632N [ Table Clamp @ CLK, CKE, CS, DQM & (V) SS -2.6 -2.4 -2.2 -2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.9 -0.8 -0.7 -0.6 -0.4 -0.2 0.0 datasheet I (mA) -57.23 -45.77 -38.26 -31.22 -24.58 -18.37 -12.56 -7.57 -3.37 -1.75 -0.58 -0.05 0.0 ...
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... K4S560432N K4S560832N K4S561632N 18. SIMPLIFIED TRUTH TABLE (V=Valid, X=Don′t care, H=Logic high, L=Logic low) Command Register Mode register set Auto refresh Entry Refresh Self refresh Exit Bank active & row addr. Read & Auto precharge disable column address Auto precharge enable Write & ...