GP1S036HEZ0F Sharp Electronics, GP1S036HEZ0F Datasheet - Page 5

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GP1S036HEZ0F

Manufacturer Part Number
GP1S036HEZ0F
Description
Manufacturer
Sharp Electronics
Type
Transmissiver
Datasheet

Specifications of GP1S036HEZ0F

Number Of Elements
1
Output Device
Phototransistor
Reverse Breakdown Voltage
6V
Collector-emitter Voltage
35V
Forward Current
50mA
Package Type
Compact
Collector Current (dc) (max)
20mA
Power Dissipation
100mW
Fall Time
150000ns
Rise Time
150000ns
Pin Count
5
Mounting
Through Hole
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
■ Absolute Maximum Ratings
I
I
θ : Device condition : Refer to the fi gure
φ : Device condition : Refer to the fi gure
ON :Output current of phototransistors : 55 μ A or more
OFF : Output current of phototransistors : 17 μ A or less
∗ Output of ON/OFF is under the condition that the device is in stationary state.
■ Supplement
C1
C2
I
I
I
I
θ
C1
C2
θ
C1
C2
: Output current of phototransistors PT
: Output current of phototransistors PT
Indefi nite
→ 240˚ → 300˚ → 330˚ → 360˚
OFF
ON
PT
PT
30˚
1
2
Principle of Tilt Detection (Viewing from detecting side)
output
output
OFF
Indefi nite
Indefi nite
60˚
(ON)
(ON)
1
2
OFF
→ 120˚ → 150˚ →
PT
PT
(OFF)
(ON)
1
2
OFF
(I
Indefi nite
F
= 5mA, V
ON
(OFF)
(OFF)
CC
= 5V, φ ≤ ± 5)
ON
Indefi nite
5
(OFF)
(ON)
210˚
PT
PT
2
1
Device state diagram
Gravity direction
(ON)
(ON)
PT
Gravity direction
φ
+
PT : Detected
PT : Undetected
Gravity direction
(Viewing from detecting side)
Sheet No.: D3-A05601EN
GP1S036HEZ
θ
+

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