DSPIC30F2012-20I/SP Microchip Technology Inc., DSPIC30F2012-20I/SP Datasheet - Page 52
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DSPIC30F2012-20I/SP
Manufacturer Part Number
DSPIC30F2012-20I/SP
Description
16 BIT MCU/DSP 28LD 20MIPS 12 KB FLASH
Manufacturer
Microchip Technology Inc.
Type
DSPr
Datasheet
1.DSPIC30F2012-20ISP.pdf
(204 pages)
Specifications of DSPIC30F2012-20I/SP
A/d Inputs
10-Channels, 12-Bit
Cpu Speed
30 MIPS
Eeprom Memory
0 Bytes
Input Output
20
Interface
I2C/SPI/UART, USART
Ios
20
Memory Type
Flash
Number Of Bits
16
Package Type
28-pin SPDIP
Programmable Memory
12K Bytes
Ram Size
1K Bytes
Timers
3-16-bit, 1-32-bit
Voltage, Range
2.5-5.5
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
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Company:
Part Number:
DSPIC30F2012-20I/SP
Manufacturer:
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Quantity:
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dsPIC30F2011/2012/3012/3013
5.6.3
Example 5-2 shows a sequence of instructions that
can be used to load the 96 bytes of write latches. 32
TBLWTL and 32 TBLWTH instructions are needed to
load the write latches selected by the Table Pointer.
EXAMPLE 5-2:
EXAMPLE 5-3:
DS70139D-page 50
; Set up a pointer to the first program memory location to be written
; program memory selected, and writes enabled
; Perform the TBLWT instructions to write the latches
; 0th_program_word
; 1st_program_word
;
; 31st_program_word
Note: In Example 5-2, the contents of the upper byte of W3 has no effect.
2nd_program_word
MOV
MOV
MOV
MOV
MOV
TBLWTL W2
TBLWTH W3
MOV
MOV
TBLWTL W2
TBLWTH W3
MOV
MOV
TBLWTL W2
TBLWTH W3
•
•
•
MOV
MOV
TBLWTL W2
TBLWTH W3
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
LOADING WRITE LATCHES
#0x0000,W0
W0
#0x6000,W0
#LOW_WORD_0,W2
#HIGH_BYTE_0,W3
#LOW_WORD_1,W2
#HIGH_BYTE_1,W3
#LOW_WORD_2,W2
#HIGH_BYTE_2,W3
#LOW_WORD_31,W2
#HIGH_BYTE_31,W3
#5
#0x55,W0
W0
#0xAA,W1
W1
NVMCON,#WR
,
,
,
,
,
,
,
,
,
,
,
LOADING WRITE LATCHES
TBLPAG
[W0]
[W0++]
[W0]
[W0++]
INITIATING A PROGRAMMING SEQUENCE
NVMKEY
NVMKEY
[W0]
[W0++]
[W0]
[W0++]
; Block all interrupts with priority <7 for
; next 5 instructions
;
; Write the 0x55 key
;
; Write the 0xAA key
; Start the erase sequence
; Insert two NOPs after the erase
; command is asserted
;
; Initialize PM Page Boundary SFR
; An example program memory address
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
5.6.4
For protection, the write initiate sequence for NVMKEY
must be used to allow any erase or program operation
to proceed. After the programming command has been
executed, the user must wait for the programming time
until programming is complete. The two instructions fol-
lowing the start of the programming sequence should
be NOPs as shown in Example 5-3.
INITIATING THE PROGRAMMING
SEQUENCE
© 2006 Microchip Technology Inc.
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