DSPIC30F2012-20I/SP Microchip Technology Inc., DSPIC30F2012-20I/SP Datasheet - Page 58
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DSPIC30F2012-20I/SP
Manufacturer Part Number
DSPIC30F2012-20I/SP
Description
16 BIT MCU/DSP 28LD 20MIPS 12 KB FLASH
Manufacturer
Microchip Technology Inc.
Type
DSPr
Datasheet
1.DSPIC30F2012-20ISP.pdf
(204 pages)
Specifications of DSPIC30F2012-20I/SP
A/d Inputs
10-Channels, 12-Bit
Cpu Speed
30 MIPS
Eeprom Memory
0 Bytes
Input Output
20
Interface
I2C/SPI/UART, USART
Ios
20
Memory Type
Flash
Number Of Bits
16
Package Type
28-pin SPDIP
Programmable Memory
12K Bytes
Ram Size
1K Bytes
Timers
3-16-bit, 1-32-bit
Voltage, Range
2.5-5.5
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
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Manufacturer:
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Quantity:
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dsPIC30F2011/2012/3012/3013
EXAMPLE 6-5:
6.4
Depending on the application, good programming
practice may dictate that the value written to the mem-
ory should be verified against the original value. This
should be used in applications where excessive writes
can stress bits near the specification limit.
DS70139D-page 56
MOV
MOV
MOV
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
MOV
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
Write Verify
#5
#LOW_ADDR_WORD,W0
#HIGH_ADDR_WORD,W1
W1
#data1,W2
W2
#data2,W2
W2
#data3,W2
W2
#data4,W2
W2
#data5,W2
W2
#data6,W2
W2
#data7,W2
W2
#data8,W2
W2
#data9,W2
W2
#data10,W2
W2
#data11,W2
W2
#data12,W2
W2
#data13,W2
W2
#data14,W2
W2
#data15,W2
W2
#data16,W2
W2
#0x400A,W0
W0
#0x55,W0
W0
#0xAA,W1
W1
NVMCON,#WR
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
DATA EEPROM BLOCK WRITE
TBLPAG
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
NVMCON
NVMKEY
NVMKEY
; Init pointer
; Get 1st data
; write data
; Get 2nd data
; write data
; Get 3rd data
; write data
; Get 4th data
; write data
; Get 5th data
; write data
; Get 6th data
; write data
; Get 7th data
; write data
; Get 8th data
; write data
; Get 9th data
; write data
; Get 10th data
; write data
; Get 11th data
; write data
; Get 12th data
; write data
; Get 13th data
; write data
; Get 14th data
; write data
; Get 15th data
; write data
; Get 16th data
; write data. The NVMADR captures last table access address.
; Select data EEPROM for multi word op
; Operate Key to allow program operation
; Block all interrupts with priority <7 for
; next 5 instructions
; Write the 0x55 key
; Write the 0xAA key
; Start write cycle
6.5
There are conditions when the device may not want to
write to the data EEPROM memory. To protect against
spurious EEPROM writes, various mechanisms have
been built-in. On power-up, the WREN bit is cleared;
also, the Power-up Timer prevents EEPROM write.
The write initiate sequence and the WREN bit together
help prevent an accidental write during brown-out,
power glitch, or software malfunction.
Protection Against Spurious Write
© 2006 Microchip Technology Inc.
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