MA4E2502L-1246 M/A-COM Technology, MA4E2502L-1246 Datasheet

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MA4E2502L-1246

Manufacturer Part Number
MA4E2502L-1246
Description
Schottky (Diodes & Rectifiers) DC-18GHz Vf@1mA = 300mv typ.
Manufacturer
M/A-COM Technology
Datasheet
1.MA4E2502L-1246.pdf (5 pages)

Specifications of MA4E2502L-1246

Product
Schottky Diodes
Peak Reverse Voltage
5 V
Forward Continuous Current
20 mA
Forward Voltage Drop
0.3 V
Maximum Power Dissipation
50 mW
Operating Temperature Range
- 40 C to + 125 C
Mounting Style
SMD/SMT
Package / Case
0502
Maximum Diode Capacitance
0.12 pF
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MA4E2502L-1246
Manufacturer:
M/A-COM
Quantity:
5 000
Company:
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Part Number:
MA4E2502L-1246
Manufacturer:
MA/COM
Quantity:
20 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MA4E2502L-1246T
Manufacturer:
MA/COM
Quantity:
12 800
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MA4E2502L-1246W
Manufacturer:
MA/COM
Quantity:
12 800
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
MA4E2502L-1246W
Manufacturer:
MA/COM
Quantity:
20 000
1
SURMOUNT
Barrier Silicon Schottky Diodes
MA4E2502 Series
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Features
• Extremely Low Parasitic Capacitance and In-
• Surface Mountable in Microwavable Circuits, No
• Rugged HMIC Construction with Polyimide
• Reliable, Multilayer Metalization with a Diffusion
• Lower Susceptibility to ESD Damage
• RoHS Compliant
Description and Applications
The MA4E2502 SURMOUNT
Silicon Low, Medium, and High Barrier Schottky
Devices fabricated with the patented Heterolithic
Microwave Integrated Circuit (HMIC) process.
HMIC circuits consist of Silicon pedestals which
form diodes or via conductors embedded in a glass
dielectric, which acts as the low dispersion, micro-
strip transmission medium.
silicon and glass allows HMIC devices to have ex-
cellent loss and power dissipation characteristics in
a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of
a beam lead device coupled with the superior me-
chanical performance of a chip.
structure employs very low resistance silicon vias
to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic dis-
charge than conventional beam lead Schottky di-
odes.
The multilayer metallization employed in the fabri-
cation of the Surmount Schottky junctions includes
a platinum diffusion barrier, which permits all de-
vices to be subjected to a 16-hour non-operating
stabilization bake at 300°C.
The “0502” outline allows for Surface Mount place-
ment and multi-functional polarity orientations.
ductance
Wirebonds Required
Scratch Protection
Barrier, 100% Stabilization Bake (300°C, 16
hours)
TM
Low, Medium, and High
TM
The combination of
Series Diodes are
The Surmount
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
The MA4E2502 Family of Surmount Schottky di-
odes are recommended for use in microwave cir-
cuits through Ku band frequencies for lower power
applications such as mixers, sub-harmonic mixers,
detectors, and limiters.
facilitates the direct replacement of more fragile
beam lead diodes with the corresponding Sur-
mount diode, which can be connected to a hard or
soft substrate circuit with solder.
Case Style 1246
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
D Sq.
Visit www.macomtech.com for additional data sheets and product information.
DIM
A
B
C
E
0.0445
0.0169
0.0040
0.0128
0.0128
MIN.
INCHES
0.0465
0.0189
0.0080
0.0148
0.0148
MAX.
The HMIC construction
• China Tel: +86.21.2407.1588
M/A-COM Products
1.130
0.430
0.102
0.325
0.325
MIN.
MILLIMETERS
MAX.
1.180
0.480
0.203
0.375
0.375
Rev. V9

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MA4E2502L-1246 Summary of contents

Page 1

... North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM Products Rev ...

Page 2

... MA4E2502 Series SURMOUNT Low, Medium, and High TM Barrier Silicon Schottky Diodes Electrical Specifications @ 25°C Model Recommended Type Number Freq. Range MA4E2502L Low Barrier GHz Medium MA4E2502M GHz Barrier MA4E2502H High Barrier GHz the dynamic slope resistance where Rj, where Idc (Idc is in mA) ...

Page 3

... The MA4E2502L-1246 chip was evaluated in a detector circuit in which the Schottky diode terminates a 50 ohm transmission line on a duroid substrate. The chip was attached to the terminal of a 3.5mm connector and the output voltage was measured through a bias tee on a voltmeter. ...

Page 4

... MA4E2502 Series SURMOUNT Low, Medium, and High TM Barrier Silicon Schottky Diodes MA4E2502L Low Barrier SPICE PARAMETERS (nA) (Ω) 26 12.8 1.20 MA4E2502M Medium Barrier SPICE PARAMETERS (mA) (Ω) 5 E-1 9.6 1.20 1.0 E-02 MA4E2502H High Barrier SPICE PARAMETERS (mA) (Ω) 5.7 E-1 6.5 1.20 1.0 E-02 ...

Page 5

... MA4E2502 Series SURMOUNT Low, Medium, and High TM Barrier Silicon Schottky Diodes Ordering Information Part Number MA4E2502L-1246W MA4E2502L-1246 MADS-002502-1246LP Pocket Tape on Reel MA4E2502M-1246W MA4E2502M-1246 MADS-002502-1246MP Pocket Tape on Reel MA4E2502H-1246W MA4E2502H-1246 MADS-002502-1246HP Pocket Tape on Reel * Call factory for standard quantities for full wafers on frames. ...

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