MT36HTF51272PZ-80EH1 Micron Technology Inc, MT36HTF51272PZ-80EH1 Datasheet
MT36HTF51272PZ-80EH1
Specifications of MT36HTF51272PZ-80EH1
Related parts for MT36HTF51272PZ-80EH1
MT36HTF51272PZ-80EH1 Summary of contents
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... DDR2 SDRAM RDIMM MT36HTF25672PZ – 2GB MT36HTF51272PZ – 4GB MT36HTF1G72PZ – 8GB Features • 240-pin, registered dual in-line memory module • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 2GB (256 Meg x 72), 4GB (512 Meg x 72), 8GB (1 Gig x 72) • ...
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... Data sheets for the base device can be found on Micron’s Web site. Notes: 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT36HTF51272PZ-667H1. PDF: 09005aef83d65c27 htf36c256_512_1gx72pz.pdf - Rev. D 10/10 EN ...
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Pin Assignments Table 6: Pin Assignments 240-Pin RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ19 61 REF DQ0 ...
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... Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR2 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 7: Pin Descriptions Symbol Type Ax Input BAx Input ...
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Table 7: Pin Descriptions (Continued) Symbol Type SDA I/O RDQSx, Output RDQS#x Err_Out# Output (open drain Supply DD DDQ V Supply DDSPD V Supply REF V Supply SS – NC – NF – NU – RFU PDF: 09005aef83d65c27 ...
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Functional Block Diagram Figure 2: Functional Block Diagram V SS RS0# RS1# DQS0 DQS0# DM CS# DQS DQS# DM CS# DQS DQS# DQ DQ0 DQ U40 U12 DQ DQ1 DQ DQ DQ2 DQ DQ DQ3 DQ DQS1 DQS1# DM CS# ...
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... DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data trans- fers at the I/O pins. DDR2 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals ...
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Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other condi- tions outside those indicated in each device's data ...
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... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully de- signed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Mi- cron encourages designers to simulate the signal characteristics of the system's memo- ry bus to ensure adequate signal integrity of the entire memory system ...
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I Specifications DD Table 10: DDR2 I Specifications and Conditions – 2GB (Die Revision F) DD Values shown for MT47H128M4 DDR2 SDRAM only and are computed from values specified in the 512Mb (128 Meg x 4) component data sheet Parameter ...
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Table 10: DDR2 I Specifications and Conditions – 2GB (Die Revision F) (Continued) DD Values shown for MT47H128M4 DDR2 SDRAM only and are computed from values specified in the 512Mb (128 Meg x 4) component data sheet Parameter Operating bank ...
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Table 11: DDR2 I Specifications and Conditions – 2GB (Die Revision G) (Continued) DD Values shown for MT47H1286M4 DDR2 SDRAM only and are computed from values specified in the 512Mb (128 Meg x 4) component data sheet Parameter Operating burst ...
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Table 12: DDR2 I Specifications and Conditions – 4GB (Die Revisions E and G) (Continued) DD Values shown for MT47H256M4 DDR2 SDRAM only and are computed from values specified in the 1Gb (256 Meg x 4) com- ponent data sheet ...
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Table 13: DDR2 I Specifications and Conditions – 4GB (Die Revision H) (Continued) DD Values shown for MT47H256M4 DDR2 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 4) com- ponent data sheet Parameter Precharge ...
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Table 14: DDR2 I Specifications and Conditions – 8GB (Die Revision C) DD Values shown for MT47H512M4 DDR2 SDRAM only and are computed from values specified in the 2Gb (512 Meg x 4) com- ponent data sheet Parameter Operating one ...
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Table 14: DDR2 I Specifications and Conditions – 8GB (Die Revision C) (Continued) DD Values shown for MT47H512M4 DDR2 SDRAM only and are computed from values specified in the 2Gb (512 Meg x 4) com- ponent data sheet Parameter Operating ...
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Register and PLL Specifications Table 15: Register Specifications SSTU32866 devices or equivalent Parameter Symbol DC high-level V Control, command, IH(DC) input voltage DC low-level V Control, command, IL(DC) input voltage AC high-level V Control, command, IH(AC) input voltage AC low-level ...
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Table 16: PLL Specifications CU877 device or equivalent Parameter Symbol DC high-level V IH input voltage DC low-level V IL input voltage Input voltage (limits high-level V IH input voltage DC low-level V IL input voltage Input ...
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Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 18: SPD EEPROM Operating Conditions Parameter/Condition Supply voltage Input high voltage: logic 1; All inputs Input low voltage: logic 0; All inputs Output low voltage: I ...
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Module Dimensions Figure 3: 240-Pin DDR2 RDIMM U1 U2 2.0 (0.079) R (4X) U12 U13 2.5 (0.098) D (2X) 2.3 (0.091) TYP Pin 1 1.0 (0.039) 2.21 (0.087) TYP 1.0 (0.039) TYP 70.66 (2.782) 45° (4X) U22 U23 U32 U33 ...