DG452EY-T1-E3 Vishay, DG452EY-T1-E3 Datasheet - Page 8

IC SWITCH QUAD SPST 16SOIC

DG452EY-T1-E3

Manufacturer Part Number
DG452EY-T1-E3
Description
IC SWITCH QUAD SPST 16SOIC
Manufacturer
Vishay
Datasheet

Specifications of DG452EY-T1-E3

Function
Switch
Circuit
4 x SPST - NO
On-state Resistance
7.3 Ohm
Current - Supply
5µA
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
16-SOIC (0.154", 3.90mm Width)
Number Of Switches
4
Switch Configuration
SPST
On Resistance (max)
11 Ohms @ +/- 5 V
On Time (max)
200 ns @ +/- 5 V
Off Time (max)
97 ns @ +/- 15 V
Off Isolation (typ)
- 60 dB
Supply Voltage (max)
36 V
Supply Voltage (min)
12 V
Supply Current
0.000001 mA @ +/- 5 V
Maximum Power Dissipation
600 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Off State Leakage Current (max)
2.5 nA
Analogue Switch Type
SPST
No. Of Channels
4
On State Resistance Max
5.3ohm
Turn Off Time
69ns
Turn On Time
88ns
Supply Voltage Range
± 5V, 12V, ± 15V
Operating Temperature Range
-40°C To
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
DG452EY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DG452EY-T1-E3
Manufacturer:
VISHAY
Quantity:
21 000
Part Number:
DG452EY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
DG452EY-T1-E3
Quantity:
70 000
DG451, DG452, DG453
Vishay Siliconix
TEST CIRCUITS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74470.
www.vishay.com
8
V
S
V
g
R
g
= 50
0 V, 2.4 V
Ω
3 V
R
g
C
S
IN
GND
Off Isolation = 20 log
Figure 5. Off-Isolation
+ 5 V
V
S
IN
C = RF Bypass
GND
+ 5 V
C = RF bypass
L
V
L
X
TALK
+ 15 V
- 15 V
Isolation = 20 log
V-
V+
V
+ 15 V
- 15 V
S
V+
V-
D
D
R
g
C
V
V
= 50
O
S
C
0 V, 2.4 V
0 V, 2.4 V
Ω
V
V
O
S
R
50
1 nF
C
NC
V
L
L
O
Ω
Figure 3. Charge Injection
C
V
O
Figure 4. Crosstalk
S
IN
S
IN
1
2
+ 5 V
1
2
V
GND
L
0 V, 2.4 V
- 15 V
V -
C
+ 15 V
V+
IN
D
D
1
2
+ 5 V
GND
V
IN
IN
V
L
C
O
X
X
Figure 6. Source/Drain Capacitances
C
OFF
OFF
+ 15 V
- 15 V
V -
V+
50
R
L
Ω
S
D
V
O
S09-2550-Rev. E, 30-Nov-09
Q = ΔV
C
C
ON
ON
Document Number: 74470
O
x C
L
or Equivalent
Impedance
HP4192A
Analyzer
Meter
OFF
OFF
ΔV
O

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