M45PE10-VMN6TP Micron Technology Inc, M45PE10-VMN6TP Datasheet - Page 37

• Manufacturer Part Number: M45PE10-VMN6TP
• Manufacturer: Micron Technology Inc

Specifications of M45PE10-VMN6TP

• Cell Type: NOR
• Density: 1Mb
• Access Time (max): 8ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: SOIC N
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128K
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / Rohs Status: Compliant

M45PE10
Table 12.
1. t
2. Value guaranteed by characterization, not 100% tested in production.
3. When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one
Symbol
t
t
SHQZ
RLRH
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RDP
t
t
t
t
DVCH
CHDX
CHSH
SHCH
SHRH
WHSL
SHWL
PW
CH
SLCH
CHSL
SHSL
CLQV
CLQX
RHSL
DP
CL
PP
t
t
sequence including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤ 256).
f
f
PE
SE
CH
C
R
(1)
(2)
(3)
(1)
(3)
(2)
(2)
(2)
+ t
CL
must be greater than or equal to 1/ f
t
t
t
t
t
t
t
Alt.
t
t
t
CLH
CSS
DSU
CSH
RST
REC
CLL
DIS
f
DH
HO
t
C
V
AC characteristics (25 MHz operation)
Clock frequency for the following
instructions: FAST_READ, PW, PP, PE,
SE, DP, RDP, WREN, WRDI, RDSR
Clock frequency for Read instructions
Clock High time
Clock Low time
Clock slew rate
S active setup time (relative to C)
S not active hold time (relative to C)
Data in setup time
Data in hold time
S active hold time (relative to C)
S not active setup time (relative to C)
S deselect time
Output disable time
Clock Low to Output valid
Output hold time
Reset pulse width
Reset recovery time
Chip should have been deselected
before Reset is de-asserted
Write protect setup time
Write protect hold time
S to deep power-down
S High to standby power mode
Page write cycle time (256 bytes)
Page write cycle time (n bytes)
Page program cycle time (256 bytes)
Page program cycle time (n bytes)
Page erase cycle time
Sector erase cycle time
Test conditions specified in
Parameter
(2)
(peak to peak)
C
(max).
Table 8
Min.
D.C.
D.C.
0.03
200
100
and
18
18
10
10
10
10
10
10
50
5
5
0
Table 9
n*0.8/256
n*0.8/256
10.2+
Typ.
0.4+
DC and AC parameters
1.2
11
10
1
Max.
25
20
15
15
30
25
20
3
3
5
5
MHz
MHz
V/ns
Unit
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ns
µs
µs
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