MT46V32M16P6TIT Micron Technology Inc, MT46V32M16P6TIT Datasheet - Page 67
MT46V32M16P6TIT
Manufacturer Part Number
MT46V32M16P6TIT
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V32M16P6TIT.pdf
(91 pages)
Specifications of MT46V32M16P6TIT
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
700ps
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
195mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant
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Figure 32:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Command
Command
Command
Address
Address
Address
READ-to-WRITE
DQS
DQS
DQS
CK#
CK#
CK#
DM
DM
DM
DQ
DQ
DQ
CK
CK
CK
Notes:
Bank a,
READ
Bank,
READ
Bank,
READ
Col n
Col n
Col n
T0
T0
T0
1. Page remains open.
2. DO n = data-out from column n; DI b = data-in from column b.
3. BL = 4 (applies for bursts of 8 as well; if BL = 2, the BURST command shown can be NOP).
4. One subsequent element of data-out appears in the programmed order following DO n.
5. Data-in elements are applied following DI b in the programmed order.
6. Shown with nominal
CL = 2
BST
BST
BST
T1
T1
T1
CL = 2.5
1
1
1
CL = 3
t
AC,
NOP
NOP
NOP
T2
T2
T2
t
DQSCK, and
DO
n
67
T2n
T2n
DO
n
WRITE
NOP
Bank,
Col b
T3
T3
T3
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
(NOM)
t
DQSS
DQSQ.
DO
n
T3n
T3n
512Mb: x4, x8, x16 DDR SDRAM
Transitioning Data
WRITE
Bank,
WRITE
Col b
T4
T4
T4
NOP
DI
b
t
(NOM)
DQSS
t
(NOM)
DQSS
T4n
©2000 Micron Technology, Inc. All rights reserved.
T5
T5
T5
DI
NOP
NOP
DI
NOP
b
b
Don’t Care
T5n
T5n
T5n
Operations
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