FDMQ8203 Fairchild Semiconductor, FDMQ8203 Datasheet - Page 5
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FDMQ8203
Manufacturer Part Number
FDMQ8203
Description
MOSFET Power Dual PT5 N-Ch & Dual PT1 PCH PowerTrench
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDMQ8203.pdf
(10 pages)
Specifications of FDMQ8203
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
85 mOhms, 161 mOhms
Forward Transconductance Gfs (max / Min)
6 S
Drain-source Breakdown Voltage
100 V, - 80 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
3.4 A, - 2.6 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
MLP
Fall Time
1.9 ns, 2.7 ns
Gate Charge Qg
2.9 nC, 13 nC
Rise Time
1.3 ns, 2.8 ns
Lead Free Status / Rohs Status
Details
©2011 Fairchild Semiconductor Corporation
FDMQ8203 Rev.C1
Typical Characteristics (N-Channel)
0.005
Figure 9. Forward Bias Safe Operating Area
0.01
0.1
10
20
10
Figure 7.
8
6
4
2
0
1
0.1
0
I
THIS AREA IS
LIMITED BY r
D
= 3 A
0.5
SINGLE PULSE
T
R
T
V
J
A
θ
DS
JA
Gate Charge Characteristics
= MAX RATED
= 25
, DRAIN to SOURCE VOLTAGE (V)
= 160
DS(on)
Q
1
o
1.0
g
C
, GATE CHARGE (nC)
o
C/W
V
DD
= 25 V
1.5
10
V
DD
= 50 V
2.0
V
2.5
DD
100
= 75 V
100 ms
10 ms
10 s
1 ms
1 s
DC
300
3.0
T
J
= 25 °C unless otherwise noted
5
1000
100
10
1
0.1
Figure 8.
f = 1 MHz
V
GS
= 0 V
V
DS
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain
Figure 10.
1
10
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