PHP225 NXP Semiconductors, PHP225 Datasheet - Page 8

• Manufacturer Part Number: PHP225
• Description: Dual intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PHP225

• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.25Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): 20V
• Continuous Drain Current: 2.3A
• Power Dissipation: 2W
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
7. Package outline
Fig 12. Package outline SOT96-1 (SO8)
PHP225
Product data sheet
SO8: plastic small outline package; 8 leads; body width 3.9 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
inches
UNIT
mm
VERSION
OUTLINE
SOT96-1
0.069
max.
1.75
A
0.010
0.004
0.25
0.10
A
1
0.057
0.049
1.45
1.25
A
076E03
2
IEC
1
8
Z
pin 1 index
0.25
0.01
A
y
3
e
0.019
0.014
0.49
0.36
b
p
D
0.0100
0.0075
All information provided in this document is subject to legal disclaimers.
0.25
0.19
MS-012
JEDEC
c
b
REFERENCES
p
0.20
0.19
D
5.0
4.8
5
4
0
(1)
Rev. 04 — 17 March 2011
w
0.16
0.15
E
4.0
3.8
(2)
M
JEITA
scale
1.27
0.05
2.5
c
e
A
0.244
0.228
2
H
6.2
5.8
A
E
1
0.041
1.05
5 mm
L
H
0.039
0.016
E
Dual P-channel intermediate level FET
E
1.0
0.4
detail X
L
p
L
0.028
0.024
L
0.7
0.6
Q
p
Q
PROJECTION
(A )
EUROPEAN
0.25
0.01
3
A
v
θ
0.25
0.01
A
w
X
v
M
0.004
0.1
A
© NXP B.V. 2011. All rights reserved.
y
PHP225
ISSUE DATE
99-12-27
03-02-18
0.028
0.012
Z
0.7
0.3
(1)
SOT96-1
8
0
θ
o
o
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