BF998T NXP Semiconductors, BF998T Datasheet - Page 7

BF998T

Manufacturer Part Number
BF998T
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF998T

Application
VHF/UHF
Channel Type
N
Channel Mode
Depletion
Continuous Drain Current
0.03A
Drain Source Voltage (max)
12V
Noise Figure (max)
1(Typ)dB
Frequency (max)
1GHz
Package Type
SOT-143B
Pin Count
3 +Tab
Input Capacitance (typ)@vds
2.1@8V@Gate 1/1.2@8V@Gate 2pF
Output Capacitance (typ)@vds
1.05@8VpF
Reverse Capacitance (typ)
0.025@8VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
NXP Semiconductors
1996 Aug 01
Silicon N-channel dual-gate MOS-FETs
Fig.15 Forward transfer admittance and phase as a
V
(mS)
V
y fs
DS
DS
10
10
(mS)
Fig.13 Input admittance as a function of the
y is
1
= 8 V; V
= 8 V; V
10
10
2
10
10
1
1
2
10
function of frequency; typical values.
G2-S
G2-S
frequency; typical values.
= 4 V; I
= 4 V; I
D
D
= 10 mA; T
= 10 mA; T
10
2
10
y fs
ϕ
amb
amb
2
fs
b is
g is
= 25 C.
= 25 C.
f (MHz)
f (MHz)
MGC468
MGC466
10
3
10
10
10
1
(deg)
ϕ
3
2
fs
7
Fig.14 Reverse transfer admittance and phase as a
V
V
(μS)
y rs
DS
DS
10
10
Fig.16 Output admittance as a function of the
10
(mS)
1
= 8 V; V
y os
= 8 V; V
10
10
3
2
10
10
1
1
2
10
function of frequency; typical values.
G2-S
G2-S
frequency; typical values.
= 4 V; I
= 4 V; I
D
D
= 10 mA; T
= 10 mA; T
10
2
ϕ
y rs
10
BF998; BF998R
rs
amb
amb
2
= 25 C.
= 25 C.
f (MHz)
Product specification
f (MHz)
b os
g os
MGC467
MGC469
10
3
10
10
10
10
1
(deg)
ϕ
3
3
2
rs

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