BF998T NXP Semiconductors, BF998T Datasheet - Page 8

BF998T

Manufacturer Part Number
BF998T
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF998T

Application
VHF/UHF
Channel Type
N
Channel Mode
Depletion
Continuous Drain Current
0.03A
Drain Source Voltage (max)
12V
Noise Figure (max)
1(Typ)dB
Frequency (max)
1GHz
Package Type
SOT-143B
Pin Count
3 +Tab
Input Capacitance (typ)@vds
2.1@8V@Gate 1/1.2@8V@Gate 2pF
Output Capacitance (typ)@vds
1.05@8VpF
Reverse Capacitance (typ)
0.025@8VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
NXP Semiconductors
1996 Aug 01
handbook, full pagewidth
Silicon N-channel dual-gate MOS-FETs
V
L1 = 45 nH; 4 turns 0.8 mm copper wire, internal diameter 4 mm.
L2 = 160 nH; 3 turns 0.8 mm copper wire, internal diameter 8 mm.
Tapped at approximately half a turn from the cold side, to adjust G
DD
= 12 V; G
S
= 2 mS; G
50 Ω
input
V DD
L
= 0.5 mS.
5.5 pF
140 kΩ
C1
L1
1 nF
100 kΩ
Fig.17 Gain control test circuit at f = 200 MHz.
1 nF
1 nF
V agc
47 kΩ
15 pF
D1
BB405
L
= 0.5 mS. C1 adjusted for G
input
V tun
330 kΩ
8
1 nF
1.8 kΩ
360 Ω
1 nF
S
1 nF
1 nF
= 2 mS.
L2
V DD
20 μH
10 pF
47 μF
D2
BB405
1 nF
output
V tun
BF998; BF998R
330 kΩ
1 nF
50 Ω
output
MGE802
Product specification

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