SI4818DY-T1 Vishay, SI4818DY-T1 Datasheet - Page 5
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SI4818DY-T1
Manufacturer Part Number
SI4818DY-T1
Description
MOSFET Small Signal 30V 6.3/9.5A
Manufacturer
Vishay
Datasheet
1.SI4818DY-T1-E3.pdf
(9 pages)
Specifications of SI4818DY-T1
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.022 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
6.3 A
Power Dissipation
1.25 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No RoHS Version Available
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4818DY-T1
Manufacturer:
VISHAY
Quantity:
130 000
Company:
Part Number:
SI4818DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 933
Part Number:
SI4818DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71122
S09-0867-Rev. C, 18-May-09
0.030
0.024
0.018
0.012
0.006
0.000
40
32
24
16
8
0
0.01
0
0
0.1
2
1
10
-4
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
V
On-Resistance vs. Drain Current
GS
Single Pulse
2
8
V
= 10 V thru 4 V
DS
Output Characteristics
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
16
4
V
GS
10
= 4.5 V
-3
24
6
Normalized Thermal Transient Impedance, Junction-to-Foot
V
3 V
2 V
GS
= 10 V
32
8
10
40
Square Wave Pulse Duration (s)
10
-2
2500
2000
1500
1000
500
10
40
32
24
16
8
0
0
-1
0.0
0
C
0.5
rss
6
1.0
V
V
Transfer Characteristics
GS
C
DS
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
1.5
Capacitance
12
2.0
1
25 °C
C
Vishay Siliconix
T
iss
C
2.5
= 125 °C
18
Si4818DY
3.0
www.vishay.com
- 55 °C
3.5
24
4.0
10
4.5
30
5