SI4818DY-T1 Vishay, SI4818DY-T1 Datasheet - Page 8
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SI4818DY-T1
Manufacturer Part Number
SI4818DY-T1
Description
MOSFET Small Signal 30V 6.3/9.5A
Manufacturer
Vishay
Datasheet
1.SI4818DY-T1-E3.pdf
(9 pages)
Specifications of SI4818DY-T1
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.022 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
6.3 A
Power Dissipation
1.25 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No RoHS Version Available
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4818DY-T1
Manufacturer:
VISHAY
Quantity:
130 000
Company:
Part Number:
SI4818DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 933
Part Number:
SI4818DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4818DY
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71122.
www.vishay.com
8
0.0001
0.001
0.01
0.1
20
10
1
0
Reverse Current vs. Junction Temperature
25
50
T
J
30 V
- Temperature (°C)
75
24 V
100
200
160
120
80
40
0
0
125
6
150
V
DS
C
oss
- Drain-to-Source Voltage (V)
Capacitance
12
18
10
1
0
24
0.3
T
30
J
V
= 150 °C
Forward Voltage Drop
F
- Forward Voltage Drop (V)
0.6
T
S09-0867-Rev. C, 18-May-09
J
= 25 °C
Document Number: 71122
0.9
1.2
1.5