IDT82P2821BHG IDT, Integrated Device Technology Inc, IDT82P2821BHG Datasheet - Page 120

IC LINE INTERFACE UNIT 640-PBGA

IDT82P2821BHG

Manufacturer Part Number
IDT82P2821BHG
Description
IC LINE INTERFACE UNIT 640-PBGA
Manufacturer
IDT, Integrated Device Technology Inc
Datasheet

Specifications of IDT82P2821BHG

Function
Line Interface Unit (LIU)
Interface
E1, J1, T1
Number Of Circuits
1
Voltage - Supply
1.8V, 3.3V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
*
Includes
Defect and Alarm Detection, Driver Over-Current Detection and Protection, LLOS Detection, PRBSARB / IB Detection and Generation
Number Of Transceivers
1
Screening Level
Industrial
Mounting
Surface Mount
Operating Temperature (min)
-40C
Operating Temperature (max)
85C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Supply
-
Power (watts)
-
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
Other names
800-1703
82P2821BHG

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDT82P2821BHG
Manufacturer:
IDT
Quantity:
170
Part Number:
IDT82P2821BHG
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
7
range -40°C ~ +85°C. To ensure the functionality and reliability of the
device, the maximum junction temperature, T
125°C. In some applications, the device will consume more power and a
thermal solution should be provided to ensure the junction temperature
T
IDT82P2821.
7.1
geographical center of the chip where the device's electrical circuits are.
It can be calculated as follows:
Thermal Management
IDT82P2821
Note:
1. Junction-to-Case Thermal Resistance
2. Junction-to-Board Thermal Resistance
3. Junction-to-Ambient Thermal Resistance
j
does not exceed T
Package
TEPBGA
The device is designed to operate over the industry temperature
Junction temperature T
Where:
For the IDT82P2821, the above values are:
640-pin
Equation 1:
θ
T
T
P = Device Power Consumption
θ
T
T
P = Refer to Section 8.3 Device Power Consumption and Dissipation
(Typical) 1
THERMAL MANAGEMENT
JUNCTION TEMPERATURE
A
A
JA
j
JA
jmax
= Junction Temperature
= Ambient Temperature
= - 40 °C ~ 85 °C
= 16.7 °C/W (when airflow rate is 0 m/s. See the above table )
= Junction-to-Ambient Thermal Resistance of the package
= 125 °C
θ
JC
4.90
(°C/W)
jmax
T
j
. Below is a table listing thermal data for the
= T
1
j
is the temperature of package typically at the
A
θ
+ P *
JB
8.50
(°C/W)
θ
JA
2
θ
JA
jmax
(°C/W)
16.7
12.8
11.3
10.5
10.1
9.9
, should not exceed
3
Airflow (m/s)
0
1
2
3
4
5
21(+1) CHANNEL HIGH-DENSITY T1/E1/J1 LINE INTERFACE UNIT
120
7.2
CULATION
temperature of 125 °C, so no extra heat enhancement is required.
might exceed the maximum junction temperature of 125 °C and an
external thermal solution such as a heatsink is required.
7.3
attached.
resistance, as the heat flowing from the die junction to ambient goes
through the package and the heatsink. θ
tion temperature does not exceed T
the heatsink-to-ambient thermal resistance θ
follows:
as follows:
θ
ment, the junction temperature will not exceed the maximum junction
temperature.
HA
Assume:
The junction temperature T
The junction temperature of
In some operation environments, the calculated junction temperature
A heatsink is expanding the surface area of the device to which it is
Where:
For the IDT82P2821, θ
θ
Assume:
The Heatsink-to-Ambient thermal resistance θ
That is, if a heatsink whose heatsink-to-ambient thermal resistance
HA
is below or equal to
T
θ
P = 1.95 W (E1 120 Ω , 100% ones, External Impedance matching)
T
Equation 2:
θ
θ
Equation 3:
T
T
P = 3.53 W (E1 75 Ω , 100% ones, Fully Internal Impedance matching)
θ
θ
determines which heatsink can be selected to ensure the junc-
EXAMPLE OF JUNCTION TEMPERATURE CAL-
HEATSINK EVALUATION
A
A
JA
j
JC
HA
j
JC
HA
= T
= 125 °C (T
θ
= 85 °C
= 85 °C
= 12.8 °C/W (airflow: 1 m/s)
JA
= Junction-to-Case (heatsink) Thermal Resistance
= 4.90 °C/W
= Heatsink-to-Ambient Thermal Resistance
= (125 °C - 85 °C ) / 3.53 W - 4.90 °C/W = 6.43 °C/W
A
is now a combination of device case and heatsink thermal
+ P *
θ
jmax
JA
= 85 °C + 1.95 W X 12.8 °C/W = 110.0 °C
θ
)
θ
HA
JA
6.43
JC
= (T
=
is
θ
j
°C/W is used in such operation environ-
JC
can be calculated as follows:
4.90 °C/W.
j
110.0
- T
+
A
) / P -
θ
jmax
HA
°C is below the maximum junction
. According to Equation 1 and 2,
JA
θ
JC
can be calculated as follows:
HA
can be calculated as
HA
February 6, 2009
can be calculated

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