ED DDR3 1G PCF8000 Samsung Semiconductor, ED DDR3 1G PCF8000 Datasheet - Page 57

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ED DDR3 1G PCF8000

Manufacturer Part Number
ED DDR3 1G PCF8000
Description
Manufacturer
Samsung Semiconductor
Type
DDR3 SDRAMr
Datasheet

Specifications of ED DDR3 1G PCF8000

Organization
64Mx16
Density
1Gb
Address Bus
16b
Access Time (max)
20ns
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
130mA
Pin Count
96
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
K4B1G04(08/16)46E
14.4 Data Setup, Hold and Slew Rate Derating :
For all input signals the total tDS (setup time) and tDH (hold time) required is calculated by adding the data sheet tDS(base) and tDH(base) value (see
Table 52) to the ∆ tDS and ∆tDH (see Table 53) derating value respectively. Example: tDS (total setup time) = tDS(base) + ∆tDS.
Setup (tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of V
Setup (tDS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of V
(see Figure 25). If the actual signal is always earlier than the nominal slew rate line between shaded ’V
derating value. If the actual signal is later than the nominal slew rate line anywhere
between shaded ’V
Figure 27).
Hold (tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of V
Hold (tDH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of V
(see Figure 26). If the actual signal is always later than the nominal slew rate line between shaded ’dc level to V
for derating value. If the actual signal is earlier than the nominal slew rate line anywhere between shaded ’dc to V
gent line to the actual signal from the dc level to V
For a valid transition the input signal has to remain above/below V
Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached V
transition) a valid input signal is still required to complete the transition and reach V
For slew rates in between the values listed in the tables the derating values may obtained by linear interpolation.
These values are typically not subject to production test. They are verified by design and characterization.
[ Table 52 ] Data Setup and Hold Base-Value
Note : AC/DC referenced for 1V/ns DQ-slew rate and 2 V/ns DQS slew rate)
[ Table 53 ] Derating values DDR3-800/1066/1333/1600 tIS/tIH-AC/DC based
Note : a. Cell contents shaded in red are defined as ’not supported’.
[ Table 54 ] Required time t
DDR3
DDR3
1333/
1066
1600
800/
-
-
Slew
Slew
V/ns
V/ns
rate
rate
tDS(base)
tDH(base)
DQ
DQ
Slew Rate[V/ns]
[ps]
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
>2.0
<0.5
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
REF
∆tDS
(DC) to ac region’, the slew rate of a tangent line to the actual signal from the ac level to dc level is used for derating value (see
88
59
75
50
0
0
-
-
-
-
-
-
-
-
-
-
-
-
4.0 V/ns
∆tDH
50
34
50
34
VAC
0
0
-
-
-
-
-
-
-
-
-
-
-
-
DDR3-800
above V
150
∆tDS
75
88
59
75
50
-2
0
0
0
-
-
-
-
-
-
-
-
-
-
3.0 V/ns
IH
∆tDH
50
34
50
34
-4
-4
(AC) {blow V
0
0
-
-
-
-
-
-
-
-
-
-
REF
min
75
57
50
38
34
29
22
13
0
0
t
(DC) level is used for derating value (see Figure 28).
VAC
∆tDS, ∆tDH Derating [ps] AC/DC based
∆tDS
88
59
75
50
-2
-6
0
0
0
0
[ps] DDR3-800/1066
-
-
-
-
-
-
-
-
2.0 V/ns
DDR3-1066
100
25
∆tDH
IL
-10
-10
50
34
50
34
-4
-4
0
0
-
-
-
-
-
-
-
-
IH/IL
(AC)} for valid transition
Page 57 of 61
DQS,DQS Differential Slew Rate
(AC) for some time tVAC (see Table 54).
∆tDS
67
58
-3
8
6
2
8
8
8
8
-
-
-
-
-
-
-
-
1.8 V/ns
max
∆tDH
-
-
-
-
-
-
-
-
-
-
42
42
-2
-8
-2
-8
8
4
8
4
-
-
-
-
-
-
-
-
IH/IL
DDR3-1333
(AC).
30
65
∆tDS
16
14
10
16
16
16
16
15
-1
5
-
-
-
-
-
-
-
-
1.6 V/ns
a
∆tDH
-10
-10
16
12
16
12
6
0
6
0
-
-
-
-
-
-
-
-
REF
∆tDS
IL
-11
22
18
13
24
24
24
23
14
REF
REF
IH
7
-
-
-
-
-
-
-
-
(DC)max and the first crossing of V
(DC) to ac region’, use nominal slew rate for
1.4V/ns
min
175
170
167
163
162
161
159
155
155
150
DDR3-1600
(DC)min and the first crossing of V
(DC) and the first crossing of V
t
(DC) and the first crossing of V
VAC
1Gb DDR3 SDRAM
REF
10
45
∆tDH
REF
-16
-16
IH/IL
20
14
20
14
[ps] DDR3-1333/1600
-2
-2
8
8
-
-
-
-
-
-
-
-
Rev. 1.0 February 2009
(DC) region’, use nominal slew rate
(DC) region’, the slew rate of a tan-
(AC) at the time of the rising clock
∆tDS
-30
26
21
15
32
32
31
22
-2
7
-
-
-
-
-
-
-
-
1.2V/ns
∆tDH
-26
-26
24
18
24
18
-6
-6
8
8
-
-
-
-
-
-
-
-
reference
V
V
IH/L
IH/L
max
∆tDS
-
-
-
-
-
-
-
-
-
-
-22
29
23
40
39
30
15
(AC)
(DC)
6
-
-
-
-
-
-
-
-
-
-
1.0V/ns
IH
IL
(AC)min.
(AC)max
REF
REF
∆tDH
(DC).
-10
-10
(DC)
34
24
10
34
24
10
-
-
-
-
-
-
-
-
-
-

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