SI5853DC Vishay, SI5853DC Datasheet

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SI5853DC

Manufacturer Part Number
SI5853DC
Description
Manufacturer
Vishay
Datasheet

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SI5853DC-T1
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SILICON
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SI5853DC-T1
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SI5853DC-T1-E3
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Notes
a.
b.
c.
Document Number: 71239
S-21251—Rev. B, 05-Aug-02
MOSFET PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage (MOSFET and Schottky)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
V
V
Surface Mounted on 1” x1” FR4 Board.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
DS
KA
--20
20
Ordering Information: Si5853DC-T1
(V)
(V)
P-Channel 1.8-V (G-S) MOSFET With Schottky Diode
Diode Forward Voltage
K
1206-8 ChipFETt
0.110 @ V
0.160 @ V
0.240 @ V
K
0.48 V @ 0.5 A
Bottom View
r
J
J
DS(on)
D
A
= 150_C) (MOSFET)
= 150_C) (MOSFET)
V
Parameter
f
D
GS
GS
GS
A
(v)
(Ω)
= --4.5 V
= --2.5 V
= --1.8 V
S
a
a
a
a
1
G
b, c
a
a
a
I
I
D
F
--3.0
--2.4
--3.6
1.0
A
(A)
(A)
= 25_C UNLESS OTHERWISE NOTED)
Marking Code
T
T
T
T
T
T
A
A
A
A
A
A
JA
= 25_C
= 85_C
= 25_C
= 85_C
= 25_C
= 85_C
XX
Part # Code
Lot Traceability
and Date Code
Symbol
T
J
V
V
V
I
I
P
P
, T
DM
FM
I
I
I
I
GS
DS
KA
D
D
S
F
D
D
stg
5 sec
--3.6
--2.6
--1.8
0.68
8
G
2.1
1.1
1.3
P-Channel MOSFET
--55 to 150
260
S
D
--20
--10
20
1.0
7
Vishay Siliconix
Steady State
--2.7
--1.9
--0.9
0.96
0.59
8
1.1
0.6
Si5853DC
K
A
www.vishay.com
Unit
_C
_C
W
W
V
V
A
A
2-1

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SI5853DC Summary of contents

Page 1

... V @ 0.5 A 1206-8 ChipFETt Bottom View Ordering Information: Si5853DC-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage (MOSFET and Schottky) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T Continuous Drain Current (T = 150_C) (MOSFET) = 150_C) (MOSFET Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) ...

Page 2

... Si5853DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a a Junction-to-Ambient Junction-to-Foot Junction to Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current ...

Page 3

... Gate Charge 2 Total Gate Charge (nC) g Document Number: 71239 S-21251—Rev. B, 05-Aug-02 2 1.5 V 2.5 3.0 3 Si5853DC Vishay Siliconix MOSFET Transfer Characteristics --55_C C 8 25_C 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Capacitance 800 C iss 600 400 200 C oss C rss ...

Page 4

... Si5853DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 1 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0 250 mA D 0.2 0.1 0.0 --0.1 --0.2 --50 -- Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...

Page 5

... Junction Temperature (_C) J Document Number: 71239 S-21251—Rev. B, 05-Aug- Square Wave Pulse Duration (sec) 0.1 100 125 150 Capacitance 150 120 Reverse Voltage (V KA Si5853DC Vishay Siliconix - -1 1 SCHOTTKY Forward Voltage Drop 150_C 25_C J 0 0.2 0.4 0 Forward Voltage Drop ( MOSFET 10 0.8 1 ...

Page 6

... Si5853DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ...

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