MIG100J6CSB1W Mitsumi Electronics, Corp., MIG100J6CSB1W Datasheet

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MIG100J6CSB1W

Manufacturer Part Number
MIG100J6CSB1W
Description
Manufacturer
Mitsumi Electronics, Corp.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MIG100J6CSB1W
Manufacturer:
TOSHIBA
Quantity:
560
High Power Switching Applications
Motor Control Applications
x Integrates inverter and control circuits (IGBT drive units, and units for protection against short-circuit current,
x The electrodes are isolated from case.
x Low thermal resistance
x V
x UL recognized: File No. E87989
Equivalent Circuit
FO
GND
MIG100J6CSB1W (600V/100A 6in1)
overcurrent, undervoltage and overtemperature) into a single package.
CE (sat)
IN
15.
1.
8.
V
V
S
D
20
GND
OUT
GND (V)
= 1.9 V (typ.)
V
Open
D
(U)
19
W
FO
GND
16.
2.
9.
18
IN
MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>
V
V
S
D
V
FO (U)
Open
D
GND
17
OUT
(W)
16
V
10.
17.
3.
GND
FO
IN
15
FO (W)
IN (U)
IN (X)
V
V
S
D
GND
OUT
14
11.
18.
4.
U
13
GND (U)
IN (W)
IN (Y)
12 11 10
GND IN FO V
GND
12. GND (W) 13.
19.
5.
V
S
OUT
V
IN (Z)
9
D
D
(V)
B
GND IN FO V
GND
8
20.
6.
7
V
S
GND (L)
6
FO (V)
V
OUT
MIG100J6CSB1W
D
(L)
5
D
2004-10-01 1/10
N
GND IN FO V
GND
4
14.
7.
3
V
FO (L)
S
IN (V)
2
OUT
1
D
P

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MIG100J6CSB1W Summary of contents

Page 1

... MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG100J6CSB1W (600V/100A 6in1) High Power Switching Applications Motor Control Applications x Integrates inverter and control circuits (IGBT drive units, and units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. x The electrodes are isolated from case. ...

Page 2

Package Dimensions (V) 8. GND (V) 13. V (L) 14. FO (L) D 19. IN (Z) 20. GND ( (U) 4. GND ( ( ...

Page 3

... Signal Terminal Layout (V) 8. GND (V) 13. V (L) 14. FO (L) D 19. IN (Z) 20. GND ( (U) 4. GND ( ( (W) 10. FO (W) 11. IN (W) D 15. Open 16. Open 17. IN (X) MIG100J6CSB1W 6. FO (V) 12. GND (W) 18. IN (Y) 2004-10-01 3/10 ...

Page 4

... 25° 100 A CE (sat 125° 100 A, T 25° 300 V, I 100 (on 25°C, Inductive load (Note 1) off t c (off) MIG100J6CSB1W Symbol Ratings Unit V 450 600 V CES I 100 100 590 150 ° 20 to 100 °C T 40 to 125 °C stg ...

Page 5

... D IN (off) FO (on (off)  125° 125° off (OC Case temperature OTr UV  UVr Test Condition Inverter IGBT R th (j-c) Inverter FRD R Compound is applied th (c-f) MIG100J6CSB1W Min Typ. Max Unit 1.4 1.6 1.8 V 2.2 2 160 160 110 118 125 °C ...

Page 6

... Switching Time Test Circuit TLP559 (IGM Timing Chart Input Pulse Waveform IN 2 Waveform C V Waveform CE 10% t off Intelligent power module OUT GND GND OUT GND GND 1.6 V 90% 10% 10 (off MIG100J6CSB1W ( (on) 2004-10-01 6/10 ...

Page 7

... Dead Time Timing Chart Waveform Waveform IN 0 Symbol Test Condition V P-N Power terminal -GND Signal terminal PWM Control c Switching time test circuit t dead (see page.6) (Note dead dead MIG100J6CSB1W Min Typ. Max Unit 300 400 V  13 kHz 2004-10-01 7/10 ...

Page 8

... Collector-emitter voltage V Switching time – 0.5 0.3 0.1 0.05 0.03 0.01 120 Collector current 100 Forward current I MIG100J6CSB1W Common emitter T j 125° ( off t c (on (off 125° 300 L-Load 80 100 120 (A) C – Common cathode :T j 25° 125° 100 ...

Page 9

... Pulse width 150 Carrier frequency f Reverse bias SOA 180 OC 160 140 120 100 125° 100 200 300 Collector-emitter voltage V 10 MIG100J6CSB1W – 25° (kHz) c 400 500 600 700 (V) CE 2004-10-01 9/10 ...

Page 10

... Turn on loss – 0.5 0.3 0 300 V 0. L-LOAD 0. 25° 125° 100 Collector current I (A) C Turn off loss – 0.5 0.3 0.1 0.05 0.03 0.01 120 Collector current I MIG100J6CSB1W 300 L-LOAD : T j 25° 125° 100 120 (A) C 2004-10-01 10/10 ...

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