AN101 Vishay Semiconductors, AN101 Datasheet
AN101
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AN101 Summary of contents
Page 1
... N-channel devices have greater conductivity than p-channel types, since electrons have higher mobility than do holes; thus n-chan- nel JFETs are approximately twice as efficient conductors compared to their p-channel counterparts. FETs MOS Enhancement Depletion Enhancement Not Possible Figure 1. FET Family Tree AN101 p 1 ...
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... AN101 In addition to the channel material, a JFET contains two ohmic (non-rectifying) contacts: the source and the drain. These are shown in Figure 2. Since a symmetrical geome- try is shown in the idealized JFET chip immaterial which contact is called the source and which is called the drain; the JFET will conduct current equally well in either direction and the source and drain leads are usually inter- changeable ...
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... The resulting gate cur- rent is extremely small – –V GS – GS(off) 5b) Circuit Arrangement for N-Channel FET Figure 5. AN101 and V control the channel cur- DS has little and V . Note that the direction greater than V , the channel cur- P alone, because ...
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... AN101 MOSFETs The metal-oxide-semiconductor FET (MOSFET) depends on the fact that it is not actually necessary to form a semi- conductor junction on the channel of a FET to achieve gate control of the channel current MOSFET, the metallic or polysilicon gate is isolated from the channel by a thin lay silicon dioxide (Figure 6a). Although the bottom of the ...
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... DMOS FET. Consequently, the vertical and lat- eral DMOS FETs complement each other in a wide selection of applications. AN101 Gate Drain Metal Oxide N+ P N– ...