AT45DB081A-RI ATMEL Corporation, AT45DB081A-RI Datasheet

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AT45DB081A-RI

Manufacturer Part Number
AT45DB081A-RI
Description
Manufacturer
ATMEL Corporation
Datasheet
Features
Description
The AT45DB081A is a 2.7-volt only, serial interface Flash memory suitable for
in-system reprogramming. Its 8,650,752 bits of memory are organized as 4096 pages
of 264 bytes each. In addition to the main memory, the AT45DB081A also contains
two SRAM data buffers of 264 bytes each. The buffers allow receiving of data while
a page in the main memory is being reprogrammed. Unlike conventional Flash
Pin Configurations
Note: PLCC package pins 16
and 17 are DON’T CONNECT.
Pin Name
CS
SCK
SI
SO
WP
RESET
RDY/BUSY
100% Compatible to AT45DB081
Single 2.7V - 3.6V Supply
Serial Interface Architecture
Page Program Operation
Optional Page and Block Erase Operations
Two 264-byte SRAM Data Buffers – Allows Receiving of Data
while Reprogramming of Nonvolatile Memory
Continuous Read Capability through Entire Array
Internal Program and Control Timer
Low Power Dissipation
13 MHz Max Clock Frequency
Hardware Data Protection Feature
Serial Peripheral Interface (SPI) Compatible – Modes 0 and 3
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
SCK
SO
NC
NC
NC
NC
NC
NC
– Single Cycle Reprogram (Erase and Program)
– 4096 Pages (264 Bytes/Page) Main Memory
– 4 mA Active Read Current Typical
– 2 µA CMOS Standby Current Typical
SI
5
6
7
8
9
10
11
12
13
PLCC
Function
Chip Select
Serial Clock
Serial Input
Serial Output
Hardware Page Write
Protect Pin
Chip Reset
Ready/Busy
29
28
27
26
25
24
23
22
21
WP
RESET
RDY/BUSY
NC
NC
NC
NC
NC
NC
GND
SCK
NC
NC
SO
NC
NC
NC
NC
NC
NC
NC
CS
SI
1
2
3
4
5
6
7
8
9
10
11
12
13
14
RDY/BUSY
SOIC
RESET
VCC
GND
SCK
WP
NC
NC
NC
NC
NC
CS
SO
SI
28
27
26
25
24
23
22
21
20
19
18
17
16
15
1
2
3
4
5
6
7
8
9
10
11
12
13
14
VCC
NC
NC
WP
RESET
RDY/BUSY
NC
NC
NC
NC
NC
NC
NC
NC
TSOP Top View
Type 1
C
D
G
A
B
E
F
through Package
CBGA Top View
SCK
NC
CS
SO
NC
NC
1
RDY/BSY
GND
NC
NC
NC
NC
2
SI
(continued)
RESET
VCC
WP
NC
NC
NC
NC
3
28
27
26
25
24
23
22
21
20
19
18
17
16
15
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
8-megabit
2.7-volt Only
Serial
DataFlash
AT45DB081A
Recommend using
AT45DB081B for new
designs.
Rev. 1634D–01/01
®
1

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AT45DB081A-RI Summary of contents

Page 1

... The AT45DB081A is a 2.7-volt only, serial interface Flash memory suitable for in-system reprogramming. Its 8,650,752 bits of memory are organized as 4096 pages of 264 bytes each. In addition to the main memory, the AT45DB081A also contains two SRAM data buffers of 264 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed ...

Page 2

... AT45DB081A does not require high input voltages for pro- gramming. The device operates from a single power supply, 2.7V to 3.6V, for both the program and read opera- tions. The AT45DB081A is enabled through the chip select pin (CS) and accessed via a three-wire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK) ...

Page 3

Memory Architecture Diagram SECTOR ARCHITECTURE SECTOR Pages 2112 bytes (2K + 64) SECTOR 1 = 248 Pages 65,472 bytes (62K + 1984) SECTOR 2 = 256 Pages 67,584 bytes (64K + 2K) SECTOR 3 = 512 Pages ...

Page 4

... BRBD A low-to-high transition on the CS pin will terminate the read operation and tri-state the SO pin. The maximum SCK frequency allowable for the Burst Array Read is defined by AT45DB081A 4 the f specification. The Burst Array Read bypasses both BAR data buffers and leaves the contents of the buffers unchanged ...

Page 5

... The device density is indicated using bits 5, 4, and 3 of the status register. For the AT45DB081A, the three bits are 1, 0 and 0. The decimal value of these three binary bits does not equate to the device density; the three bits represent a ...

Page 6

... SCK pin to load the opcode, the address bits and the don’t care bits from the SI pin. The transfer of the page of data from the main memory to the buffer will begin when the CS pin transitions from a low to a high state. During the AT45DB081A 6 PA7 PA6 ...

Page 7

The operation is internally self-timed and should take place in a maximum time of t time, the status register will indicate that the part is busy sector is programmed or reprogrammed sequentially page-by-page, then the ...

Page 8

... Auto Page Rewrite through Buffer 2 Note: In Tables 2 and 3, an SCK mode designation of “Any” denotes any one of the four modes of operation (Inactive Clock Polarity Low, Inactive Clock Polarity High, SPI Mode 0, or SPI Mode 3). AT45DB081A 8 SCK Mode Inactive Clock Polarity Low or High ...

Page 9

Table 4. Detailed Bit-level Addressing Sequence Opcode Opcode 50H 52H 53H ...

Page 10

... This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. AT45DB081A 0°C to 70°C -40°C to 85°C 2.7V to 3.6V ...

Page 11

DC Characteristics Symbol Parameter I Standby Current SB Active Current, Read I CC1 Operation Active Current, I CC2 Program/Erase Operation I Input Load Current LI I Output Leakage Current LO V Input Low Voltage IL V Input High Voltage IH ...

Page 12

... SO SI Waveform 2 – Inactive Clock Polarity High and SPI Mode 3 CS tCSS SCK HIGH AT45DB081A 12 Output Test Load AC MEASUREMENT LEVEL times for the SI signal are referenced to the low-to-high transition on the SCK signal. Waveform 1 shows timing that is also compatible with SPI Mode 0, and Waveform 2 shows timing that is compatible with SPI Mode 3 ...

Page 13

Reset Timing (Inactive Clock Polarity Low Shown) CS SCK RESET HIGH IMPEDANCE SO SI Note: The CS signal should be in the high state before the RESET signal is deasserted. Command Sequence for Read/Write Operations (except Status Register Read) MSB ...

Page 14

... Buffer Write CS SI CMD Buffer to Main Memory Page Program (Data from Buffer Programmed into Flash Page Each transition represents 8 bits and 8 clock cycles AT45DB081A 14 FLASH MEMORY ARRAY MAIN MEMORY PAGE PROGRAM THROUGH BUFFER 2 MAIN MEMORY PAGE PROGRAM THROUGH BUFFER 1 I/O INTERFACE ...

Page 15

Read Operations The following block diagram and waveforms illustrate the various read sequences available. PAGE (264 BYTES) MAIN MEMORY PAGE TO BUFFER 1 BUFFER 1 (264 BYTES) BUFFER 1 READ Main Memory Page Read CS SI CMD ...

Page 16

... Detailed Bit-level Read Timing – Inactive Clock Polarity Low Continuous Array Read (Opcode: 68H) CS SCK 1 2 tSU HIGH-IMPEDANCE SO Burst Array Read (Opcode: 68H) CS SCK 1 2 tSU HIGH-IMPEDANCE SO AT45DB081A DATA OUT DATA OUT LSB MSB BIT 2111 BIT PAGE n PAGE n+1 tBRBD ...

Page 17

Detailed Bit-level Read Timing – Inactive Clock Polarity Low (Continued) Main Memory Page Read (Opcode: 52H) CS SCK 1 2 tSU COMMAND OPCODE Buffer Read (Opcode: 54H or 56H) CS SCK 1 2 tSU COMMAND OPCODE ...

Page 18

... Detailed Bit-level Read Timing – Inactive Clock Polarity High Continuous Array Read (Opcode: 68H) CS SCK 1 2 tSU HIGH-IMPEDANCE SO Burst Array Read (Opcode: 68H) CS SCK 1 2 tSU HIGH-IMPEDANCE SO AT45DB081A DATA OUT DATA OUT LSB MSB BIT 2111 BIT PAGE n PAGE n+1 tBRBD ...

Page 19

Detailed Bit-level Read Timing – Inactive Clock Polarity High (Continued) Main Memory Page Read (Opcode: 52H) CS SCK 1 2 tSU COMMAND OPCODE Buffer Read (Opcode: 54H or 56H) CS SCK 1 2 tSU COMMAND OPCODE ...

Page 20

... Detailed Bit-level Read Timing – SPI Mode 0 Continuous Array Read (Opcode: E8H) CS SCK 1 2 tSU HIGH-IMPEDANCE SO Burst Array Read (Opcode: E8H) CS SCK 1 2 tSU HIGH-IMPEDANCE SO AT45DB081A DATA OUT DATA OUT LSB MSB BIT 2111 BIT PAGE n PAGE n+1 tBRBD LSB MSB ...

Page 21

Detailed Bit-level Read Timing – SPI Mode 0 (Continued) Main Memory Page Read (Opcode: D2H) CS SCK 1 2 tSU COMMAND OPCODE Buffer Read (Opcode: D4H or D6H) CS SCK 1 2 tSU COMMAND OPCODE SI ...

Page 22

... Detailed Bit-level Read Timing – SPI Mode 3 Continuous Array Read (Opcode: E8H) CS SCK 1 2 tSU HIGH-IMPEDANCE SO Burst Array Read (Opcode: E8H) CS SCK 1 2 tSU HIGH-IMPEDANCE SO AT45DB081A DATA OUT DATA OUT LSB MSB BIT 2111 BIT PAGE n PAGE n+1 tBRBD LSB MSB ...

Page 23

Detailed Bit-level Read Timing – SPI Mode 3 (Continued) Main Memory Page Read (Opcode: D2H) CS SCK 1 2 tSU COMMAND OPCODE Buffer Read (Opcode: D4H or D6H) CS SCK 1 2 tSU COMMAND OPCODE SI ...

Page 24

... A page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer to Main Memory Page Program operation. 3. The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially for each page within the entire array. AT45DB081A 24 START provide address ...

Page 25

Figure 2. Algorithm for Randomly Modifying Data MAIN MEMORY PAGE PROGRAM Notes preserve data integrity, each page of a DataFlash sector must be updated/rewritten at least once within every 10,000 cumulative page erase/program operations Page Address ...

Page 26

... Plastic Thin Small Outline Package (TSOP) 20C1 20-ball Array Plastic Chip-scale Ball Grid Array (CGBA) AT45DB081A 26 Ordering Code AT45DB081A-JC AT45DB081A-RC AT45DB081A-TC AT45DB081A-CC AT45DB081A-JI AT45DB081A-RI AT45DB081A-TI AT45DB081A-CI Package Type Package Operation Range 32J Commercial 28R (0°C to 70°C) 28T 20C1 ...

Page 27

Packaging Information 32J, 32-lead, Plastic J-leaded Chip Carrier (PLCC) Dimensions in Inches and (Millimeters) JEDEC STANDARD MS-016 AE .045(1.14) X 45˚ PIN NO. 1 IDENTIFY .553(14.0) .547(13.9) .032(.813) .595(15.1) .026(.660) .585(14.9) .050(1.27) TYP .300(7.62) REF .430(10.9) .390(9.90) AT CONTACT POINTS ...

Page 28

... Atmel Corporation 2001. Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard war- ranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein ...

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