PHB98N03LT Philips Semiconductors, PHB98N03LT Datasheet
PHB98N03LT
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PHB98N03LT Summary of contents
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... N-channel enhancement mode field-effect transistor Rev. 02 — 18 October 2001 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ Product availability: PHP98N03LT in SOT78 (TO-220AB) PHB98N03LT in SOT404 (D PHD98N03LT in SOT428 (D-PAK). 2. Features Low on-state resistance Fast switching. 3. Applications Computer motherboard high frequency converters. ...
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... Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). ...
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... Philips Semiconductors 120 P der (%) 100 P tot P = ---------------------- 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of mounting base temperature (A) R DSon = single pulse mb DM Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. ...
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... Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to mounting th(j-mb) base R thermal resistance from junction to ambient th(j-a) 7.1 Transient thermal impedance 10 Z th(j-mb) (K/ 0.5 0.2 0 0.05 0. single pulse Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. ...
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... Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GS(th) I drain-source leakage current DSS I gate-source leakage current GSS R drain-source on-state resistance DSon Dynamic characteristics Q total gate charge g(tot) Q gate-source charge ...
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... Philips Semiconductors 3 ºC ( 0.2 0.4 0 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. 0.02 R DSon º 0.015 0.01 0.005 Fig 7. Drain-source on-state resistance as a function of drain current; typical values. ...
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... Philips Semiconductors 2.5 V GS(th) (V) max 2 typ 1.5 min 1 0 Fig 9. Gate-source threshold voltage as a function of junction temperature. (pF MHz GS Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 9397 750 08726 Product data PHP/PHB/PHD98N03LT N-channel enhancement mode fi ...
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... Philips Semiconductors ( 175 º 0.4 0 and 175 Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. 9397 750 08726 Product data PHP/PHB/PHD98N03LT N-channel enhancement mode field-effect transistor 03af06 ...
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... Philips Semiconductors 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB ( DIMENSIONS (mm are the original dimensions UNIT A 1 4.5 1.39 0.9 1.3 mm 4.1 1.27 0.7 1.0 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION IEC SOT78 Fig 14. SOT78 (TO-220AB). 9397 750 08726 ...
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... Philips Semiconductors Plastic single-ended surface mounted package (Philips version of D (one lead cropped DIMENSIONS (mm are the original dimensions UNIT c 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 OUTLINE VERSION IEC SOT404 2- Fig 15. SOT404 (D PAK) 9397 750 08726 Product data PHP/PHB/PHD98N03LT N-channel enhancement mode field-effect transistor ...
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... Philips Semiconductors Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped DIMENSIONS (mm are the original dimensions ( UNIT max. max. 2.38 0.65 0.89 0.89 1.1 mm 2.22 0.45 0.71 0.71 0.9 Note 1. Measured from heatsink back to lead. OUTLINE VERSION IEC ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 02 20011018 - Product data; second version. Supersedes data PHP98N03LT- July 2001 (9397 750 08338). Modifications: • Table 5 “Characteristics” on page 01 20010716 - Product data; initial version. 9397 750 08726 Product data PHP/PHB/PHD98N03LT N-channel enhancement mode fi ...
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... This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. ...
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... Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 6 Limiting values Thermal characteristics 7.1 Transient thermal impedance . . . . . . . . . . . . . . 4 8 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 Disclaimers © Koninklijke Philips Electronics N.V. 2001. ...