2MBI200N-060-03 Fuji Electric holdings CO.,Ltd, 2MBI200N-060-03 Datasheet
2MBI200N-060-03
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2MBI200N-060-03 Summary of contents
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... Features · VCE(sat) classified for easy parallel connection · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25° ...
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... Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=25°C 400 300 200 100 Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25° Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=300V, RG=9.1 ohm, VGE=±15V, Tj=25°C 1000 100 10 0 100 ...
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... Switching time vs. RG Vcc=300V, Ic=200A, VGE=±15V, Tj=25°C 1000 100 10 5 Gate resistance : RG [ohm] Forward current vs. Forward voltage VGE=0V 500 400 300 200 100 Forward voltage : VF [V] Transient thermal resistance 0.1 0.01 0.001 0.01 Pulse width : PW [sec.] 500 400 300 200 ...
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... Switching loss vs. Collector current Vcc=300V, RG=9.1 ohm, VGE=±15V 100 Collector current : Ic [A] Outline Drawings 200 300 IGBT Module Capacitance vs. Collector-Emitter voltage Tj=25° Collector-Emitter voltage : VCE [V] 35 ...