ADUC7126 Analog Devices, ADUC7126 Datasheet - Page 44

• Manufacturer Part Number: ADUC7126
• Description: Precision Analog Microcontroller, 12-Bit Analog I/O, Large Memory, ARM7TDMI MCU with Enhanced IRQ Handler
• Manufacturer: Analog Devices

Specifications of ADUC7126

• Mcu Core: ARM7 TDMI
• Mcu Speed (mips): 40
• Gpio Pins: 40
• Adc # Channels: 16
• Other: PWM

ADuC7124/ADuC7126
NONVOLATILE FLASH/EE MEMORY
The ADuC7124/ADuC7126 incorporate Flash/EE memory
technology on-chip to provide the user with nonvolatile, in-
circuit reprogrammable memory space.
Like EEPROM, flash memory can be programmed in-system
at a byte level, although it must first be erased. The erase is
performed in page blocks. As a result, flash memory is often
and more correctly referred to as Flash/EE memory.
Overall, Flash/EE memory represents a step closer to the
ideal memory device that includes nonvolatility, in-circuit
programmability, high density, and low cost. Incorporated in
the ADuC7124/ADuC7126, Flash/EE memory technology allows
the user to update program code space in-circuit, without the
need to replace one-time programmable (OTP) devices at
remote operating nodes.
Flash/EE Memory
The ADuC7124/ADuC7126 contain two 64 kB arrays of Flash/EE
memory. In the first block, the lower 62 kB is available to the
user, and the upper 2 kB of this Flash/EE program memory
array contain permanently embedded firmware, allowing in-circuit
serial download. The 2 kB of embedded firmware also contain a
power-on configuration routine that downloads factory cali-
brated coefficients to the various calibrated peripherals (band
gap references and so on). This 2 kB embedded firmware is
hidden from user code. It is not possible for the user to read, write,
or erase this page. In the second block, all 64 kB of Flash/EE
memory are available to the user.
The 126 kB of Flash/EE memory can be programmed in-circuit,
using the serial download mode or the JTAG mode provided.
Flash/EE Memory Reliability
The Flash/EE memory arrays on the parts are fully qualified for
two key Flash/EE memory characteristics: Flash/EE memory
cycling endurance and Flash/EE memory data retention.
Endurance quantifies the ability of the Flash/EE memory to be
cycled through many program, read, and erase cycles. A single
endurance cycle is composed of four independent, sequential
events, defined as
1.
2.
3.
4.
In reliability qualification, every half word (16-bit wide)
location of the three pages (top, middle, and bottom) in the
Flash/EE memory is cycled 10,000 times from 0x0000 to
0xFFFF. As indicated in Table 1, the Flash/EE memory
endurance qualification is carried out in accordance with
JEDEC Retention Lifetime Specification A117 over the
industrial temperature range of −40° to +125°C. The results
allow the specification of a minimum endurance figure over a
supply temperature of 10,000 cycles.
Initial page erase sequence.
Read/verify sequence (single Flash/EE).
Byte program sequence memory.
Second read/verify sequence (endurance cycle).
Rev. B | Page 44 of 104
Retention quantifies the ability of the Flash/EE memory to
retain its programmed data over time. Again, the parts are
qualified in accordance with the formal JEDEC Retention
Lifetime Specification (A117) at a specific junction temperature
(T
memory is cycled to its specified endurance limit (see the
Flash/EE Memory section) before data retention is character-
ized. This means that the Flash/EE memory is guaranteed to
retain its data for its fully specified retention lifetime every time
the Flash/EE memory is reprogrammed. In addition, note that
retention lifetime, based on the activation energy of 0.6 eV,
derates with T
PROGRAMMING
The 62 kB of Flash/EE memory can be programmed in-circuit,
using the serial download mode or the provided JTAG mode.
Serial Downloading (In-Circuit Programming)
The ADuC7124/ADuC7126 facilitate code download via the
standard UART serial port. The parts enter serial download
mode after a reset or power cycle if the BM pin is pulled low
through an external 1 kΩ resistor. When in serial download
mode, the user can download code to the full 126 kB of Flash/EE
memory while the device is in-circuit in its target application
hardware. An executable PC serial download is provided as
part of the development system for serial downloading via
the UART. The
download protocol.
Downloading (In-Circuit Programming) via I
The ADuC7126BSTZ126I and ADuC7126BSTZ126IRL models
facilitate code download via the the I
download mode after a reset or power cycle if the BM pin is
pulled low through an external 1 kΩ resistor and Flash Address
0x80014 = 0xFFFFFFFF. Once in download mode, the user can
download code to the full 126 kB of Flash/EE memory while the
device is in-circuit in its target application hardware. An executable
PC I
for serial downloading via the I
J
= 85°C). As part of this qualification procedure, the Flash/EE
2
C download is provided as part of the development system
600
450
300
150
0
30
Figure 39. Flash/EE Memory Data Retention
J
as shown in Figure 39.
AN-724
40
JUNCTION TEMPERATURE (°C)
55
application note describes the UART
70
2
C. A USB-to-I
85
2
C port. The models enter
100
125
2
C download
135
2
C
150