PMEG2010EPK NXP Semiconductors, PMEG2010EPK Datasheet - Page 5

• Manufacturer Part Number: PMEG2010EPK
• Description: Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD1608 Surface-Mounted Device (SMD) plastic package with visible and solderab
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
Table 7.
PMEG2010EPK
Product data sheet
Symbol
V
I
C
R
Fig 4.
F
d
Z
(K/W)
th(j-a)
10
10
2
10
Ceramic PCB, Al
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
-3
Characteristics
0.75
0.33
duty cycle =
0.05
0.2
0
Parameter
forward voltage
reverse current
diode capacitance
0.25
0.02
0.01
0.5
0.1
1
10
2
O
-2
3
, standard footprint
Conditions
I
δ ≤ 0.02; T
I
δ ≤ 0.02; T
I
δ ≤ 0.02; T
I
δ ≤ 0.02; T
V
V
V
V
All information provided in this document is subject to legal disclaimers.
F
F
F
F
10
R
R
R
R
= 100 mA; pulsed; t
= 500 mA; pulsed; t
= 700 mA; pulsed; t
= 1 A; pulsed; t
= 10 V; T
= 20 V; T
= 1 V; f = 1 MHz; T
= 10 V; f = 1 MHz; T
-1
Rev. 1 — 20 January 2012
j
j
j
j
= 25 °C
= 25 °C
= 25 °C
= 25 °C
j
j
= 25 °C
= 25 °C
p
≤ 300 µs;
1
p
p
p
j
= 25 °C
≤ 300 µs;
≤ 300 µs;
≤ 300 µs;
j
= 25 °C
20 V, 1 A low VF MEGA Schottky barrier rectifier
10
PMEG2010EPK
Min
-
-
-
-
-
-
-
-
10
2
Typ
240
310
330
370
50
150
65
25
t
p
© NXP B.V. 2012. All rights reserved.
(s)
006aac954
Max
280
350
390
415
250
600
-
-
10
3
Unit
mV
mV
mV
mV
µA
µA
pF
pF
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