BUK7105-40AIE NXP Semiconductors, BUK7105-40AIE Datasheet - Page 8

• Manufacturer Part Number: BUK7105-40AIE
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7105-40AIE_5
Product data sheet
Fig 5.
Fig 7.
R DSon
(mΩ)
400
300
200
100
(A)
I D
20
15
10
0
5
0
function of drain-source voltage; typical values
of drain current; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
20
10
V GS = 5.5 V 6 V
8
2
100
7.5
4
200
6.5 V
6
Label is V GS (V)
7
7 V
300
8 V
8
V DS (V)
10 V
I D (A)
20 V
03ni86
03ni87
6.5
5.5
6
4.5
5
4
400
10
Rev. 05 — 9 February 2009
Fig 6.
Fig 8.
R DSon
(mΩ)
a
2.0
1.6
1.2
0.8
0.4
12
8
4
0
0
−60
of gate-source voltage; typical values
factor as a function of junction temperature
Drain-source on-state resistance as a function
Normalized drain-source on-state resistance
4
N-channel TrenchPLUS standard level FET
8
0
BUK7105-40AIE
12
60
16
120
© NXP B.V. 2009. All rights reserved.
V GS (V)
T
03ni88
j
(°C)
03ni30
20
180
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