BUK7207-30B NXP Semiconductors, BUK7207-30B Datasheet - Page 3

• Manufacturer Part Number: BUK7207-30B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
BUK7207-30B
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 23 February 2011
Conditions
T
R
V
see
T
V
see
pulsed; t
see
T
T
pulsed; t
I
V
D
j
mb
mb
mb
GS
GS
GS
GS
≥ 25 °C; T
= 75 A; V
Figure 3
Figure 3
Figure 3
= 100 °C; V
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
= 20 kΩ
p
p
≤ 10 µs; T
≤ 10 µs; T
sup
j
≤ 185 °C
j
j
j(init)
= 25 °C; see
= 25 °C; see
≤ 30 V; R
GS
Figure 2
= 25 °C; unclamped
= 10 V; see
j
mb
= 25 °C;
= 25 °C
N-channel TrenchMOS standard level FET
GS
= 50 Ω;
Figure
Figure
Figure 1
1;
1;
BUK7207-30B
[1]
[2]
[2]
[2]
[1]
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
© NXP B.V. 2011. All rights reserved.
185
185
Max
30
30
20
112
75
75
449
167
75
112
449
329
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
mJ
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