BUK7230-55A NXP Semiconductors, BUK7230-55A Datasheet - Page 6

• Manufacturer Part Number: BUK7230-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7230-55A_2
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
I
10
10
10
10
10
10
D
D
160
120
80
40
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
2
V
GS
4
min
(V) = 20
typ
6
4
16
12
10
9
8
7
6
5
max
V
All information provided in this document is subject to legal disclaimers.
GS
8
V
(V)
DS
03na46
03aa35
(V)
10
Rev. 02 — 16 March 2010
6
Fig 6.
Fig 8.
R
(mΩ)
DSon
(S)
g
fs
50
40
30
20
10
20
16
12
8
4
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
20
10
BUK7230-55A
40
15
60
V
© NXP B.V. 2010. All rights reserved.
GS
I
D
(V)
(A)
03na44
03na45
20
80
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