BUK7277-55A NXP Semiconductors, BUK7277-55A Datasheet - Page 7

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7277-55A

Manufacturer Part Number
BUK7277-55A
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
BUK7277-55A
Manufacturer:
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NXP Semiconductors
BUK7277-55A
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
D
25
20
15
10
5
0
5
4
3
2
1
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
T
j
2
= 175 °C
0
4
60
T
max
min
typ
j
= 25 °C
6
120
All information provided in this document is subject to legal disclaimers.
8
T
V
j
GS
(°C)
03nc07
03aa32
(V)
Rev. 02 — 26 January 2011
180
10
Fig 10. Gate-source voltage as a function of gate
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
V
DSon
(V)
GS
180
160
140
120
100
10
80
60
40
8
6
4
2
0
charge; typical values
of drain current; typical values
0
0
N-channel TrenchMOS standard level FET
V
5.5
DD
= 14 V
10
6 6.5
5
20
7
BUK7277-55A
8 V
30
GS
10
V
(V) = 10
DD
Q
© NXP B.V. 2011. All rights reserved.
40
G
= 44 V
(nC)
I
D
03nc05
03nc10
(A)
15
50
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