BUK7535-55A NXP Semiconductors, BUK7535-55A Datasheet - Page 3

• Manufacturer Part Number: BUK7535-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK7535-55A
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
I
(%)
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
100
150
All information provided in this document is subject to legal disclaimers.
T
mb
03aa24
(°C)
Conditions
T
R
T
see
T
T
T
T
pulsed; t
I
T
D
j
mb
mb
mb
mb
mb
j(init)
Rev. 02 — 27 January 2011
GS
200
≥ 25 °C; T
= 14 A; V
Figure 3
= 25 °C; V
= 100 °C; V
= 25 °C; pulsed; t
= 25 °C; see
= 25 °C
= 20 kΩ
= 25 °C; unclamped
p
≤ 10 µs; T
sup
j
≤ 175 °C
GS
≤ 55 V; R
Fig 2.
GS
Figure 2
= 10 V; see
= 10 V; see
P
(%)
mb
der
120
p
80
40
= 25 °C
0
≤ 10 µs; see
GS
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
= 50 Ω; V
Figure
Figure 1
50
Figure 3
GS
1;
= 10 V;
BUK7535-55A
100
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
175
175
Max
55
55
20
35
25
139
85
35
139
49
03na19
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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