BUK753R4-30B NXP Semiconductors, BUK753R4-30B Datasheet - Page 8

• Manufacturer Part Number: BUK753R4-30B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK753R4-30B
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(A)
I
(A)
I
10
10
10
10
10
10
D
AL
10
10
−1
−2
−3
−4
−5
−6
2
1
10
avalanche current as a function of avalanche
time
gate-source voltage
Single shot and repetitive avalanche rating;
0
-3
10
-2
2
min
10
-1
(3)
typ
4
(2)
1
max
V
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GS
t
003aab195
AL
(V)
(ms)
03aa35
(1)
10
6
Rev. 2 — 21 April 2011
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
V
R
GS(th)
(mΩ)
(V)
DSon
12
10
8
6
4
2
0
5
4
3
2
1
0
−60
junction temperature
of gate-source voltage; typical values
4
N-channel TrenchMOS standard level FET
8
0
BUK753R4-30B
12
60
max
min
typ
120
16
© NXP B.V. 2011. All rights reserved.
V
003aab188
T
GS
j
(°C)
03aa32
(V)
180
20
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